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1、1P-Channel 60 V(D-S)MOSFETFEATURESTrenchFET Power MOSFETMaterial categorization:APPLICATIONSLoad SwitchNotes:a.Duty cycle 1%.b.When mounted on 1 square PCB(FR-4 material).c.See SOA curve for voltage derating.d.Package limited.PRODUCT SUMMARY VDS(V)RDS(on)()ID(A)-600.036 at VGS=-10 V-40d0.045 at VGS=
2、-4.5 V-40dTO-252SGDTop ViewSGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS(TA=25 C,unless otherwise noted)Parameter SymbolLimitUnitDrain-Source Voltage VDS-60VGate-Source Voltage VGS 20Continuous Drain Current(TJ=175 C)TC=25 CID-40dATC=125 C-27.5Pulsed Drain CurrentIDM-80Avalanche CurrentIAS-30Single Pu
3、lse Avalanche EnergyaL=0.1 mHEAS125mJPower DissipationTC=25 CPD113cWTA=25 C2.5b,cOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Junction-to-Ambientbt 10 sRthJA1518C/WSteady State4050Junction-to-CaseRthJC0.821.1DTU40P0
4、62Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.c.Independent of operating temperature.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional opera
5、tionof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS(TJ=25 C,unless otherwise noted)ParameterSymbol Te
6、st Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-60VGate Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1-3Gate-Body LeakageIGSSVDS=0 V,VGS=20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-60 V,VGS=0 V-1AVDS=-60 V,VGS=0 V,TJ=125 C-50VDS=-60 V,VGS=0 V,TJ=150 C-100On-
7、State Drain CurrentaID(on)VDS=-5 V,VGS=-10 V-50ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-17 A 0.0220.036VGS=-10 V,ID=-40 A,TJ=125 C0.048VGS=-10 V,ID=-40 A,TJ=150 C0.058VGS=-4.5 V,ID=-14 A 0.045Forward Transconductanceagfs VDS=-15 V,ID=-17 A 61SDynamicbInput CapacitanceCissVGS=0 V,VDS=-2
8、5 V,f=1 MHz 4950pFOutput CapacitanceCoss480Reverse Transfer CapacitanceCrss 405Total Gate ChargecQgVDS=-30 V,VGS=-10 V,ID=-40 A 110165nCGate-Source ChargecQgs 19Gate-Drain ChargecQgd 28Turn-On Delay Timectd(on)VDD=-30 V,RL=0.6 ID -40 A,VGEN=-10 V,RG=6 1523nsRise Timectr70105Turn-Off Delay Timectd(of
9、f)175260Fall Timectf175260Source-Drain Diode Ratings and Characteristics TC=25 CbContinuous CurrentIS-40APulsed CurrentISM-80Forward VoltageaVSDIF=-40 A,VGS=0 V-1-1.6VReverse Recovery TimetrrIF=-40 A,dI/dt=100 A/s 4570nsDTU40P063TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Output Characterist
10、icsTransconductanceCapacitanceVDS -Drain-to-Source Voltage(V)-Drain Current(A)ID3 V01020304050607080012345VGS=10 thru 4 V0204060801000102030405060VGS-Gate-to-Source Voltage(V)-Transconductance(S)gfsTC=-55 C25 C125 C0100020003000400050006000700080000102030405060VDS -Drain-to-Source Voltage(V)C -Capac
11、itance(pF)CissCossCrssTransfer CharacteristicsOn-Resistance vs.Drain CurrentGate Charge010203040506070800.00.51.01.52.02.53.03.54.0VGS -Gate-to-Source Voltage(V)-Drain Current(A)ID25 C-55 CTC=125 C0.0000.0200.0300.0400.0500.06001020304050607080-On-Resistance()ID -Drain Current(A)RDS(on)VGS=10 VVGS=4
12、.5 V0246810020406080100120-Gate-to-Source Voltage(V)Qg -Total Gate Charge(nC)VGSVDS=30 VID=40 ADTU40P064TYPICAL CHARACTERISTICS THERMAL RATINGS(25 C,unless otherwise noted)On-Resistance vs.Junction Temperature0.60.81.01.21.41.61.82.0(Normalized)-On-Resistance TJ -Junction Temperature(C)RDS(on)VGS=10
13、 VID=17 A-50-250255075100125150Source-Drain Diode Forward Voltage0.00.30.60.91.21.5VSD -Source-to-Drain Voltage(V)-Source Current(A)IS100101TJ=25 CTJ=150 CDrain Current vs.Case TemperatureTC-Case Temperature(C)-Drain Current(A)ID0510203040500255075100125150Safe Operating Area1101000.1110100-Drain Cu
14、rrent(A)IDTC=25 CSingle Pulse RDS(on)*Limited byP(t)=0.01P(t)=0.001P(t)=0.0001P(t)=1P(t)=0.1 BVDSS LimitedVDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specifiedNormalized Thermal Transient Impedance,Junction-to-CaseSquare Wave Pulse Duration(s)210.10.0110-410-310-210-1Normalized
15、Effective TransientThermal Impedance10.20.10.05Duty Cycle=0.5Single Pulse0.02DTU40P061TO-252AA CASE OUTLINENoteDimension L3 is for reference only.L3DL4L5bb2e1E1D1CA1gage plane height(0.5 mm)eb3EC2ALHMILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A2.182.380.0860.094A1-0.127-0.005b0.640.880.0250.035b20.761.140.
16、0300.045b34.955.460.1950.215C0.460.610.0180.024C20.460.890.0180.035D5.976.220.2350.245D15.21-0.205-E6.356.730.2500.265E14.32-0.170-H9.4010.410.3700.410e2.28 BSC0.090 BSCe14.56 BSC0.180 BSCL1.401.780.0550.070L30.891.270.0350.050L4-1.02-0.040L51.141.520.0450.060ECN:X12-0247-Rev.M,24-Dec-12DWG:5347Package Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK(TO-252)0.420(10.668)Recommended Minimum PadsDimensions in Inches/(mm)0.224(5.690)0.180(4.572)0.055(1.397)0.243(6.180)0.087(2.202)0.090(2.286)Application Note