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1、1P-Channel 100 V(D-S)MOSFETFEATURESHalogen-free According to IEC 61249-2-21DefinitionTrenchFET Power MOSFET100%Rg and UIS TestedCompliant to RoHS Directive 2002/95/ECAPPLICATIONSPower SwitchDC/DC ConvertersPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)Qg(Typ.)-1000.195 at VGS=-10 V-1911.70.210 at VGS=-4.5 V-1
2、7TO-252SGDTop ViewDrain Connected to TabSGDP-Channel MOSFETNotes:a.Duty cycle 1%.b.See SOA curve for voltage derating.c.When Mounted on 1 square PCB(FR-4 material).ABSOLUTE MAXIMUM RATINGS TC=25 C,unless otherwise notedParameter SymbolLimitUnitDrain-Source Voltage VDS-100VGate-Source Voltage VGS 20C
3、ontinuous Drain Current(TJ=150 C)TC=25 CID-19ATC=70 C-12.1Pulsed Drain CurrentIDM-45Avalanche CurrentIAS-18Single Avalanche EnergyaL=0.1 mHEAS16.2mJMaximum Power DissipationaTC=25 CPD32.1bWTA=25 Cc2.5Operating Junction and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RESISTANCE RATINGS Parame
4、ter SymbolLimitUnitJunction-to-Ambient(PCB Mount)cRthJA50C/WJunction-to-Case(Drain)RthJC3.9DTU19P102Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.c.Independent of operating temperature.Stresses beyond those listed under“Absolute Maximum R
5、atings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended peri
6、ods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVDS=0 V,ID=-250 A-100VGate Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1-2.5Gate-Body LeakageIGSSVDS=0 V,VGS=20 V 250nAZero Gate Voltage
7、 Drain CurrentIDSSVDS=-100 V,VGS=0 V-1AVDS=-100 V,VGS=0 V,TJ=125 C-50VDS=-100 V,VGS=0 V,TJ=150 C-250On-State Drain CurrentaID(on)VDS -10 V,VGS=-10 V-15ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-3.6 A 0.1620.195VGS=-4.5 V,ID=-3.4 A0.1750.210Forward Transconductanceagfs VDS=-15 V,ID=-3.6 A
8、 12SDynamicbInput CapacitanceCissVGS=0 V,VDS=-50 V,f=1 MHz 1055pFOutput CapacitanceCoss65Reverse Transfer CapacitanceCrss 41Total Gate ChargecQgVDS=-50 V,VGS=-10 V,ID=-3.6 A 23.234.8nCVDS=-50 V,VGS=-4.5 V,ID=-3.6 A11.717.6Gate-Source ChargecQgs 3.5Gate-Drain ChargecQgd 4.8Gate ResistanceRgf=1 MHz1.2
9、5.711.5Turn-On Delay Timectd(on)VDD=-50 V,RL=17.2 ID -2.9 A,VGEN=-10 V,Rg=1 714nsRise Timectr1218Turn-Off Delay Timectd(off)3350Fall Timectf918Drain-Source Body Diode Ratings and Characteristics TC=25 CbContinuous CurrentIS-19APulsed CurrentISM-45Forward VoltageaVSDIF=-2.9 A,VGS=0 V-0.8-1.5VReverse
10、Recovery TimetrrIF=-2.9 A,dI/dt=100 A/s 5075nsPeak Reverse Recovery CurrentIRM(REC)-4-6AReverse Recovery ChargeQrr98147nCDTU19P103TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsTransfer Characteristics Transconductance0369121501234VGS=10 V thru 5 VVGS=4 VVDS-Drain-to-Source
11、 Voltage(V)-Drain Current(A)IDVGS=3 V0.00.40.81.21.62.001234TC=25 CTC=125 CTC=-55 CVGS-Gate-to-Source Voltage(V)-Drain Current(A)ID051015202503691319ID-Drain Current(A)-Transconductance(S)gfsTC=125 CTC=-55 CTC=25 COn-Resistance vs.Drain CurrentOn-Resistance vs.Gate-to-Source VoltageGate Charge0.100.
12、150.200.250.3003691319VGS=4.5 VVGS=10 V-On-Resistance()RDS(on)ID-Drain Current(A)0.000.150.300.450.600246810TJ=25 CTJ=150 C-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)02468100510152025VDS=80 VID=3.6 AVDS=50 VVDS=25 V-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VGSDTU19P104TYPICAL CHARAC
13、TERISTICS 25 C,unless otherwise notedSource-Drain Diode Forward VoltageCapacitanceOn-Resistance vs.Junction Temperature0.11101000.00.30.60.91.2TJ=25 CTJ=150 CVSD-Source-to-Drain Voltage(V)-Source Current(A)ISCrss040080012001600020406080100CissCossVDS-Drain-to-Source Voltage(V)C-Capacitance(pF)0.50.9
14、1.31.72.1-50-250255075100125150ID=3.6 AVGS=4.5 VVGS=10 VTJ-Junction Temperature(C)(Normalized)-On-ResistanceRDS(on)Threshold VoltageDrain Source Breakdown vs.Junction Temperature Current Derating-2.3-2.0-1.7-1.4-1.1-50-250255075100125150ID=250 A(V)VGS(th)TJ-Temperature(C)-130-124-118-112-106-100-50-
15、250255075100125150ID=250 AVDS-Drain-to-Source Voltage(V)TJ-Junction Temperature(C)02468100255075100125150TC-Case Temperature(C)ID-Drain Current(A)DTU19P105TYPICAL CHARACTERISTICS 25 C,unless otherwise noted Single Pulse Avalanche Current Capability vs.Time110100Time(s)IDAV(A)TJ=150 CTJ=25 C10-310-21
16、0-110-410-610-5Safe Operating Area10010.11101000.01190.1TA=25 CSingle Pulse100 msLimited by RDS(on)*BVDSS Limited1 ms100 s10 ms1 s,10 s,DCVDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specified-Drain Current(A)IDNormalized Thermal Transient Impedance,Junction-to-Case10-310-201110-
17、110-40.20.1Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.05Single Pulse0.02DTU19P10 1TO-252AA CASE OUTLINENoteDimension L3 is for reference only.L3DL4L5bb2e1E1D1CA1gage plane height(0.5 mm)eb3EC2ALHMILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A2.182.380.0860
18、.094A1-0.127-0.005b0.640.880.0250.035b20.761.140.0300.045b34.955.460.1950.215C0.460.610.0180.024C20.460.890.0180.035D5.976.220.2350.245D15.21-0.205-E6.356.730.2500.265E14.32-0.170-H9.4010.410.3700.410e2.28 BSC0.090 BSCe14.56 BSC0.180 BSCL1.401.780.0550.070L30.891.270.0350.050L4-1.02-0.040L51.141.520.0450.060ECN:X12-0247-Rev.M,24-Dec-12DWG:5347Package Information 1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK(TO-252)0.420(10.668)Recommended Minimum PadsDimensions in Inches/(mm)0.224(5.690)0.180(4.572)0.055(1.397)0.243(6.180)0.087(2.202)0.090(2.286)Application Note