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1、1P-Channel 30-V(D-S)MOSFETFEATURESHalogen-freeTrenchFET Power MOSFET100%Rg Tested100%UIS TestedAPPLICATIONSLoad SwitchNotebook Adaptor SwitchNotes:a.Surface mounted on 1 x 1 FR4 board.b.t=10 s.c.Maximum under Steady State conditions is 85 C/W.d.Based on TC=25 C.PRODUCT SUMMARY VDS(V)RDS(on)()ID(A)dQ
2、g(Typ.)-300.043 at VGS=-10 V-14.929.5 nC0.070 at VGS=-4.5 V-11.6ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise notedParameterSymbolLimitUnitDrain-Source Voltage VDS-30VGate-Source Voltage VGS 25Continuous Drain Current(TJ=150 C)TC=25 CID-14.9ATC=70 C-11.9TA=25 C-10.9a,bTA=70 C-8.6a,bPulsed Drain
3、CurrentIDM-60Continuous Source-Drain Diode CurrentTC=25 CIS-4.1TA=25 C-2.2a,bAvalanche CurrentL=0.1 mHIAS-20Single-Pulse Avalanche EnergyEAS20mJMaximum Power DissipationTC=25 CPD5.0WTC=70 C3.2TA=25 C2.7a,bTA=70 C1.7a,bOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RESISTA
4、NCE RATINGSParameterSymbol Typical MaximumUnitMaximum Junction-to-Ambienta,ct 10 sRthJA3846C/WMaximum Junction-to-FootSteady State RthJF2025RoHSCOMPLIANTTO-252SGDTop ViewSGDP-Channel MOSFET DTU15P032Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production t
5、esting.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exp
6、osure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-30VVDS Temperature CoefficientVDS/TJID=-250 A-34mV/CVGS(
7、th)Temperature CoefficientVGS(th)/TJ5.3Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1.4-2.5VGate-Source LeakageIGSSVDS=0 V,VGS=25 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-30 V,VGS=0 V-1AVDS=-30 V,VGS=0 V,TJ=55 C-5On-State Drain CurrentaID(on)VDS -10 V,VGS=-10 V-30ADrain-Source On-Stat
8、e ResistanceaRDS(on)VGS=-10 V,ID=-10 A 0.0320.043VGS=-4.5 V,ID=-8 A 0.0650.07Forward Transconductanceagfs VDS=-10 V,ID=-10 A 28SDynamicbInput CapacitanceCiss VDS=-15 V,VGS=0 V,f=1 MHz2550pFOutput CapacitanceCoss 455Reverse Transfer CapacitanceCrss 390Total Gate ChargeQg VDS=-15 V,VGS=-10 V,ID=-10 A5
9、786nCVDS=-15 V,VGS=-4.5 V,ID=-10 A29.545Gate-Source ChargeQgs8Gate-Drain ChargeQgd 22Gate ResistanceRgf=1 MHz0.52.24.4Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VGEN=-10 V,Rg=1 1325nsRise Timetr1224Turn-Off DelayTimetd(off)4070Fall Timetf918Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VG
10、EN=-4.5 V,Rg=1 4880Rise Timetr92160Turn-Off DelayTimetd(off)3460Fall Timetf1935Drain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentISTC=25 C-4.1APulse Diode Forward CurrentISM-60Body Diode VoltageVSDIS=-3 A,VGS=0 V-0.75-1.2VBody Diode Reverse Recovery TimetrrIF=-10 A,dI/dt=100
11、 A/s,TJ=25 C2745nsBody Diode Reverse Recovery ChargeQrr1627nCReverse Recovery Fall Timeta12nsReverse Recovery Rise Timetb15 DTU15P033TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsOn-Resistance vs.Drain CurrentGate Charge012243648600.00.51.01.52.02.5VDS-Drain-to-Source Volt
12、age(V)-Drain Current(A)IDVGS=10 thru 4 VVGS=3 VVGS=1 V,2 V0.0050.0100.0150.0200.0250.0300102030405060-On-Resistance()RDS(on)ID-Drain Current(A)VGS=10 VVGS=4.5 V024681001224364860ID=10 A-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VGSDS=10 VVDS=15 VVVDS=20 VTransfer CharacteristicsCapacitanceOn-
13、Resistance vs.Junction Temperature0246810012345VGS-Gate-to-Source Voltage(V)-Drain Current(A)IDTC=125 CTC=25 CTC=-55 CCrss080016002400320040000510152025CissVDS-Drain-to-Source Voltage(V)C-Capacitance(pF)Coss0.60.81.01.21.41.6-50-250255075100125150TJ-Junction Temperature(C)(Normalized)-On-ResistanceR
14、DS(on)ID=-10 AVGS=-10 VVGS=-4.5 V DTU15P034TYPICAL CHARACTERISTICS 25 C,unless otherwise noted Source-Drain Diode Forward VoltageThreshold Voltage0.00.20.40.60.81.01.2VSD-Source-to-Drain Voltage(V)-Source Current(A)IS10.010.0010.110100TJ=150 CTJ=25 C-0.4-0.2 0.00.20.40.60.8-50-250255075100125150Vari
15、ance(V)VGS(th)TJ-Temperature(C)ID=250 AID=5 mAOn-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-Ambient0.000.020.040.060.080.100246810-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)TJ=25 CTJ=125 CID=10 A03468102136170011100.00.01Time(s)Power(W)0.1Safe Operating Area0.0110011
16、000.01-Drain Current(A)ID0.1VDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specified0.111010TA=25 CSingle PulseBVDSSLimited by RDS(on)*DC10 s100 ms10 ms1 ms1 s DTU15P035MOSFET TYPICAL CHARACTERISTICS 25 C,unless otherwise noted*The power dissipation PD is based on TJ(max)=150 C,usi
17、ng junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Current Derating*0.03.46.810.213.617.00255075100125150TC-Case Tempe
18、rature(C)ID-Drain Current(A)Power,Junction-to-FootTC-Case Temperature(C)0.01.22.43.64.86.00255075100125150Power(W)Power Derating,Junction-to-Ambient0.00.40.81.21.62.00255075100125150TA-Ambient Temperature(C)Power(W)DTU15P036TYPICAL CHARACTERISTICS 25 C,unless otherwise noted Normalized Thermal Trans
19、ient Impedance,Junction-to-Ambient10-310-2110100010-110-41000.20.10.05Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Single Pulset1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=85 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedDuty Cycle=0.50.02Normalized Thermal
20、Transient Impedance,Junction-to-Foot10-310-201110-110-40.20.1Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Single Pulse0.020.05 DTU15P031TO-252AA CASE OUTLINENoteDimension L3 is for reference only.L3DL4L5bb2e1E1D1CA1gage plane height(0.5 mm)eb3EC2A
21、LHMILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A2.182.380.0860.094A1-0.127-0.005b0.640.880.0250.035b20.761.140.0300.045b34.955.460.1950.215C0.460.610.0180.024C20.460.890.0180.035D5.976.220.2350.245D15.21-0.205-E6.356.730.2500.265E14.32-0.170-H9.4010.410.3700.410e2.28 BSC0.090 BSCe14.56 BSC0.180 BSCL1.401.78
22、0.0550.070L30.891.270.0350.050L4-1.02-0.040L51.141.520.0450.060ECN:X12-0247-Rev.M,24-Dec-12DWG:5347Package Information 1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK(TO-252)0.420(10.668)Recommended Minimum PadsDimensions in Inches/(mm)0.224(5.690)0.180(4.572)0.055(1.397)0.243(6.180)0.087(2.202)0.090(2.286)Application Note