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1、1Dual P-Channel 30 V(D-S)MOSFETFEATURES TrenchFET Power MOSFET AEC-Q101 Qualifiedc 100%Rg and UIS TestedNotesa.Pulse test;pulse width 300 s,duty cycle 2%.b.When mounted on 1 square PCB(FR-4 material).c.Parametric verification ongoing.PRODUCT SUMMARYVDS(V)-30RDS(on)()at VGS=-10 V 0.046RDS(on)()at VGS
2、=-4.5 V 0.078ID(A)per leg-5.4ConfigurationDualS1G1D1P-Channel MOSFETS2G2D2P-Channel MOSFETS1D1G1D1S2D2G2D2SO-85678Top View2341ABSOLUTE MAXIMUM RATINGS(TC=25 C,unless otherwise noted)PARAMETERSYMBOLLIMITUNITDrain-Source Voltage VDS-30V Gate-Source VoltageVGS 20Continuous Drain CurrentTC=25 C ID-5.4AT
3、C=125 C-3.8Continuous Source Current(Diode Conduction)IS-3Pulsed Drain CurrentaIDM-26Single Pulse Avalanche CurrentL=0.1 mHIAS-17Single Pulse Avalanche EnergyEAS 14mJ Maximum Power DissipationaTC=25 C PD3.3W TC=125 C 1.1Operating Junction and Storage Temperature RangeTJ,Tstg-55 to+175C THERMAL RESIS
4、TANCE RATINGSPARAMETERSYMBOLLIMITUNITJunction-to-AmbientPCB MountbRthJA110C/WJunction-to-Foot(Drain)RthJF45 DTM49532Notesa.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.c.Independent of operating temperature.Stresses beyond those listed under“Abs
5、olute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximum rating conditions
6、for extended periods may affect device reliability.SPECIFICATIONS(TC=25 C,unless otherwise noted)PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX.UNITStaticDrain-Source Breakdown Voltage VDSVGS=0 V,ID=-250 A-30-V Gate-Source Threshold Voltage VGS(th)VDS=VGS,ID=-250 A-1.5-2.0-2.5Gate-Source Leakage IGSSVDS=
7、0 V,VGS=20 V-100nA Zero Gate Voltage Drain Current IDSS VGS=0 VVDS=-30 V-1A VGS=0 VVDS=-30 V,TJ=125 C-50VGS=0 VVDS=-30 V,TJ=175 C-150On-State Drain CurrentaID(on)VGS=-10 VVDS-5 V-20-ADrain-Source On-State ResistanceaRDS(on)VGS=-10 VID=-4.9 A-0.0350.045VGS=-10 VID=-4.9 A,TJ=125 C-0.066VGS=-10 VID=-4.
8、9 A,TJ=175 C-0.076VGS=-4.5 VID=-3.7 A-0.0650.078Forward Transconductancebgfs VDS=-15 V,ID=-4.9 A-9-S DynamicbInput CapacitanceCiss VGS=0 V VDS=-25 V,f=1 MHz-557670pF Output CapacitanceCoss-126190Reverse Transfer CapacitanceCrss-90115Total Gate ChargecQg VGS=-10 V VDS=-15 V,ID=-4.9 A-1522nC Gate-Sour
9、ce ChargecQgs-2.1Gate-Drain ChargecQgd-3.5-Gate ResistanceRgf=1 MHz2.605.268.50Turn-On Delay Timectd(on)VDD=-15 V,RL=6.8 ID -1 A,VGEN=-10 V,Rg=1-35nsRise Timectr-914Turn-Off Delay Timectd(off)-2030Fall Timectf-914Source-Drain Diode Ratings and CharacteristicsbPulsed CurrentaISM-26AForward VoltageVSD
10、IF=-2 A,VGS=0 V-0.8-1.2V DTM49533TYPICAL CHARACTERISTICS(TA=25 C,unless otherwise noted)Output CharacteristicsTransfer CharacteristicsCapacitanceTransfer CharacteristicsOn-Resistance vs.Drain CurrentGate Charge0 6 12 18 24 30 0246810ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)VGS=10 V thru 6 VV
11、GS=3 VVGS=4 VVGS=5 V0 2 4 6 8 10 012345ID-Drain Current(A)VGS-Gate-to-Source Voltage(V)TC=25 CTC=125 CTC=-55 C0 200 400 600 800 1000 0 5 10 15 20 25 30 C-Capacitance(pF)VDS-Drain-to-Source Voltage(V)CissCossCrss0 6 12 18 24 30 0246810ID-Drain Current(A)VGS-Gate-to-Source Voltage(V)TC=125 CTC=-55 CT=
12、25 CC0.00 0.03 0.06 0.09 0.12 0.15 0612182430RDS(on)-On-Resistance()ID-Drain Current(A)VGS=4.5 VVGS=10 V0 2 4 6 8 10 036912 15VGS-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)ID=4.9 AVDS=15 V DTM49534TYPICAL CHARACTERISTICS(TA=25 C,unless otherwise noted)On-Resistance vs.Junction TemperatureOn-R
13、esistance vs.Gate-to-Source Voltage Source Drain Diode Forward VoltageThreshold VoltageDrain Source Breakdown vs.Junction Temperature0.5 0.8 1.1 1.4 1.7 2.0-50-250255075100125150175RDS(on)-On-Resistance(Normalized)TJ-Junction Temperature(C)ID=4.9 AVGS=10 VVGS=4.5 V0.00 0.05 0.10 0.15 0.20 0.25 02468
14、10RDS(on)-On-Resistance()VGS-Gate-to-Source Voltage(V)TJ=150 CTJ=25 C0.0010.010.11101000.0 0.2 0.4 0.6 0.8 1.0 1.2 IS-Source Current(A)VSD-Source-to-Drain Voltage(V)TJ=150 CTJ=25 C-0.5-0.20.10.40.71.0-50-250255075100125150175VGS(th)Variance(V)TJ-Temperature(C)ID=250 AID=5 mA-40-38-36-34-32-30-50-250
15、255075100125150175VDS-Drain-to-Source Voltage(V)TJ-Junction Temperature(C)ID=1 mA DTM49535THERMAL RATINGS(TA=25 C,unless otherwise noted)Safe Operating AreaNormalized Thermal Transient Impedance,Junction-to-Ambient0.010.11101000.010.1110100ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)*VGS minimu
16、m VGSat which RDS(on)is specified100 msLimited by RDS(on)*1 msIDMLimitedTC=25 CSingle PulseBVDSS Limited10 ms100 s1 s10 s,DC210.10.0110-410-310-210-11106000.20.10.050.02Single PulseDuty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance1.Duty Cycle,D=2.Per Unit Bas
17、e=RthJA=110 C/W3.TJM-TA=PDMZthJA(t)t1t2t1t2Notes:4.Surface MountedPDM100 DTM49536THERMAL RATINGS(TA=25 C,unless otherwise noted)Normalized Thermal Transient Impedance,Junction-to-FootNoteThe characteristics shown in the two graphs-Normalized Transient Thermal Impedance Junction-to-Ambient(25 C)-Norm
18、alized Transient Thermal Impedance Junction-to-Foot(25 C)are given for general guidelines only to enable the user to get a“ball park”indication of part capabilities.The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements.Th
19、e latter is valid for the part mounted on printed circuit board-FR4,size 1 x 1 x 0.062,double sided with 2 oz.copper,100%on both sides.The part capabilities can widely vary depending on actual application parameters and operating conditions.10-310-211010-110-4210.10.010.20.10.050.02Single PulseDuty
20、Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance DTM49531DIMMILLIMETERSINCHESMinMaxMinMaxA1.351.750.0530.069A10.100.200.0040.008B0.350.510.0140.020C0.190.250.00750.010D4.805.000.1890.196E3.804.000.1500.157e1.27 BSC0.050 BSCH5.806.200.2280.244h0.250.500.0100.020L0
21、.500.930.0200.037q0808S0.440.640.0180.026ECN:C-06527-Rev.I,11-Sep-06DWG:549843125687HEh x 45CAll Leadsq0.101 mm0.004LBA1AeD0.25 mm(Gage Plane)SOIC(NARROW):8-LEADJEDEC Part Number:MS-012SPackage Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-80.246(6.248)Recommended Minimum
22、PadsDimensions in Inches/(mm)0.172(4.369)0.152(3.861)0.047(1.194)0.028(0.711)0.050(1.270)0.022(0.559)Return to IndexReturn to IndexApplication Note1DisclaimerALL PRODUCT,PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVERELIABILITY,FUNCTION OR DESIGN OR OTHERWISE.Din-Tek
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