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1、1Dual N-Channel 2.5-V(G-S)MOSFET FEATURESHalogen-free Option AvailableTrenchFET Power MOSFETsPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)200.022 at VGS=4.5 V 6.60.040 at VGS=2.5 V 5.5D S 1 S 1 G 1 1 2 3 4 8 7 6 5 D S 2 S 2 G 2 TSSOP-8 T op V i e w Notes:a.Surface Mounted on FR4 board,t 10 s.*Pb containing t
2、erminations are not RoHS compliant,exemptions may apply.ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise notedParameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS20VGate-Source Voltage VGS 12Continuous Drain Current(TJ=150 C)aTA=25 CID6.65.2ATA=70 C5.53.5Pulsed Drain CurrentIDM30Continu
3、ous Source Current(Diode Conduction)aIS1.51.0Maximum Power DissipationaTA=25 CPD1.51.0WTA=70 C0.960.64Operating Junction and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RESISTANCE RATINGS ParameterSymbol Typ.Max.UnitMaximum Junction-to-Ambientat 10 sRthJA7283C/WSteady State100120Maximum Junc
4、tion-to-Foot(Drain)Steady StateRthJF5570AvailablePb-freeRoHS*COMPLIANTG1S1G2DS2D DTM82052 3 5 5 3 Q 6 8 8 7 2 黄R 1 3 7 6 0 3 2 电5 0 7 02Notes:a.For design aid only;not subject to production testing.b.Pulse test;pulse width 300 s,duty cycle 2%.Stresses beyond those listed under“Absolute Maximum Ratin
5、gs”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods
6、may affect device reliability.TYPICAL CHARACTERISTICS 25 C,unless otherwise notedSPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.aMax.Unit StaticGate Threshold VoltageVGS(th)VDS=VGS,ID=250 A 0.61.6VGate-Body LeakageIGSSVDS=0 V,VGS=4.5 V 200nAZero Gate Voltage Dra
7、in CurrentIDSSVDS=20 V,VGS=0 V 1AVDS=20 V,VGS=0 V,TJ=70 C 25On-State Drain CurrentbID(on)VDS 5 V,VGS=4.5 V 30ADrain-Source On-State ResistancebRDS(on)VGS=4.5 V,ID=6.5 A 0.01650.022VGS=2.5 V,ID=5.5 A 0.0330.040Forward Transconductancebgfs VDS=10 V,ID=6.5 A 30SDiode Forward VoltagebVSDIS=1.5 A,VGS=0 V
8、 0.711.2VDynamicaTotal Gate ChargeQg VDS=10 V,VGS=4.5 V,ID=6.5 A 1218nCGate-Source ChargeQgs2.2Gate-Drain ChargeQgd 3.6Turn-On Delay Timetd(on)VDD=10 V,RL=10 ID 1 A,VGEN=4.5 V,RG=6 245365nsRise Timetr330495Turn-Off Delay Timetd(off)8601300Fall Timetf510765Gate-Current vs.Gate-Source Voltage024681003
9、69121518-Gate Current(mA)IGSSVGS-Gate-to-Source Voltage(V)Gate Current vs.Gate-Source Voltage0369 1 2 150.01 100 10000 T J =25 C-Gate Current(A)I GSS 0.1 1 10 1000 V GS -Gate-to-Source Voltage(V)T J =150 C DTM82053TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsOn-Resistance
10、 vs.Drain CurrentOn-Resistance vs.Junction Temperature051015202530012345VGS=5 thru 3 V2 V2.5 VVDS -Drain-to-Source Voltage(V)-Drain Current(A)ID0.010.020.030.040.050.06051015202530VGS=4.5 VVGS=2.5 V-On-Resistance()RDS(on)ID -Drain Current(A)0.6 0.8 1.0 1.2 1.4 1.6-50-25 0 2 5 5 0 7 5 100 125 150 V G
11、S =4.5 V I D =6.5 A TJ-Junction Temperature(C)(Normalized)-On-ResistanceRDS(on)Transfer CharacteristicsGate ChargeSource-Drain Diode Forward Voltage0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T C =125 C-55 CVGS -Gate-to-Source Voltage(V)-Drain Current(A)ID25 C0 1 2 3 4 5 036912 15V DS =10 V I D =
12、6.5 A-Gate-to-Source Voltage(V)Qg -Total Gate Charge(nC)VGS1.2 1.50.1 10 40 00.3 0.6 0.9 T J =25 CT J =150 CVSD -Source-to-Drain Voltage(V)-Source Current(A)IS 1 DTM82054TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOn-Resistance vs.Gate-to-Source VoltageSingle Pulse Power0.000.010.020.030.040.
13、050123456ID=6.5 A-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)0.0010116020080100.1Power (W)Time(s)401200.01Threshold VoltageSafe Operating Area,Junction-to-Case-0.6-0.4-0.2 0.0 0.2 0.4-50-25 0 2 5 5 0 7 5 100 125 150I D =250 AVariance(V)VGS(th)TJ-Temperature(C)100 1 0.11 101000.01 10 1 ms-Dra
14、in Current(A)ID0.1 Limited by RDS(on)*T C =25 C Single Pulse 10 ms 100 ms DC10 s 1 s VDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specifiedNormalized Thermal Transient Impedance,Junction-to-Ambient2 1 0.1 0.01 10-4 10-3 10-2 10-1 1 100 600Duty Cycle=0.5 0.2 0.1 0.05 0.02 Single P
15、ulse 1.Duty Cycle,D=2.Per Unit Base=R th J A =11 5 C/W3.T JM -T A =P DM Z th J A(t)t 1 t 2 t 1 t 2 Notes:4.Surface Mounted P DM Square Wave Pulse Duration(s)Normalized Ef fective T ransient Thermal Impedance 10 DTM82055TYPICAL CHARACTERISTICS 25 C,unless otherwise notedNormalized Thermal Transient I
16、mpedance,Junction-to-Foot10-310-211010-110-4210.10.010.20.10.050.02Single PulseDuty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance DTM8205E1ECR 0.10(4 Corners)BR 0.10Corners)AA2A1DLL1?K10.25(Gage Plane)e1?JEDEC Part Number:MO-153?DimMinNomMaxA1.20A10.050.100.15
17、A20.801.001.05B0.190.280.30C0.127D2.903.003.10E6.206.406.60E14.304.404.50e0.65L0.450.600.75L10.901.001.10Y0.10?K10?3?6?ECN:S-03946Rev.G,09-Jul-01DWG:5844Package Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR TSSOP-80.262(6.655)Recommended Minimum PadsDimensions in Inches/(mm)0.092(2.337)0.182(4.623)0.040(1.016)0.026(0.660)0.014(0.356)0.012(0.305)Return to IndexReturn to IndexApplication Note