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1、精品文档，仅供学习与交流，如有侵权请联系网站删除【精品文档】第 2 页1acceptor 受主2allowed energy band允带3binary semiconductor 二元半导体4charge neutrality condition 电中性条件5compensated semiconductor 补偿半导体6conduction band and valence band 导带和价带7effective mass 有效质量8density of states function状态密度函数9diamond structure金刚石结构10diffusion coefficient
2、扩散系数11donor施主12drift velocity 漂移速度13electron and hole电子和空穴14elemental semiconductor 元素半导体15equilibrium carrier concentration热平衡载流子浓度16expitaxy外延17extrinsic semiconductor非本征半导体18Fermi energy (or level)费米能级19Forbidden energy band禁带20indirect bandbap semiconductor非直接带隙半导体21intrinsic semiconductor本征半导体2
3、2majority carrier多数载流子23MBE分子束外延24Miller indices密勒指数25minority carrier少数载流子26mobility迁移率27MOCVD金属有机气相沉积28nondegenerate semiconductor非简并半导体29n-type material n型材料30Pauli exclusion principle 泡利不相容原理31phonon声子32photon光子33primitive cell原胞34quantum state量子态35quaternary semiconductor四元半导体36scattering散射37su
4、bstrate衬底38thermal motion热运动39unit cell单胞40wave-particle duality波粒二相性41 continuity equations连续性方程42 diffusion length扩散长度43 diffusion coefficient扩散系数44Einstein relationship爱因斯坦关系45 p-n junction p-n结46 built-in voltage 内建电势差47 carrier lifetime 载流子寿命48 space charge region 空间电荷区49 depletion width 耗尽宽度50
5、 saturation drift velocity 饱和迁移速度 51. Insulating gate bipolar transistor (IGBT) 绝缘栅晶体管52. FET 场效应晶体管53. metal oxide semiconductor (MOS) 金属氧化物半导体54. MOSFET MOS场效应晶体管55. Heterostructure FET (HFET) 异质结晶体管56. High electron mobility transistor (HEMT) 高电子迁移率晶体管57. Integrated Circuits (IC) 集成电路58. Light Emitting Diode (LED) 发光二极管59. Photo Diode (PD) 光电二极管60. Lattice constant 晶格常数61. wurzite 纤锌矿62. zinc Blende 闪锌矿63. Schottky Barrier Diode (SBD) 肖特基二极管64. Ohmic contact 欧姆接触65. heterojunction 异质结66. two dimensional electron gas (2DEG) 二维电子气