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1、PCissueinspectionrequisitionBoxLabelDevicetypeLotnoCustomernameQuantityVisualSamplePackingconditionWaferQtyAnydamage400 x100 xDimensionThicknessInkthicknessCompleteInspectionReportsIncomingWaferInspectionPQI004Chipoutsonedgeofdieshallnotpenetrateintoanyactivecircuitarea.Note:Activecircuitareaisdefin
2、edasfromoutsideedgeofthebondpadsinward,exceptwherethereisanactivelineinthedesignlocatedbeyondtheoutsideedgeofthebondpadsCracks裂縫碎片 邊緣 不可 穿透 線路 活性的採納報廢Cracksshallnotbelongerthan1.0milinsideactivecircuitareathatpointstowardoperatingmetalorfunctionalcircuitelement.裂縫 不可 超過限度機能 線路 組成Cracksthatdonotpoint
3、towardoperatingmetalorfunctionalcircuitelementsshallnotexceed5.0milsinlength.(Silicon&GaAsDie)裂縫 指向 不 線路 活性的不可 超過限度Discolorationinglassivationouterlayerisharmlessandshallbeacceptable,providingitisnotobscuringanyotherdamage.Thereshallbenocorrosioninmetallization,oranyotherlayers.Metallizationhavingan
4、ylocalizeddiscolorationshallbecloselyexaminedandshallberejected,unlessitisdemonstratedtobeaharmlessfilm,glassivationinterface,orothernon-obscuringeffects.Discoloration or Corrosion變色 腐蝕狀態玻璃鈍化ThereshallbenoConductive(opaque)ForeignMaterialonthetopofunglassivateddiethatislargeenoughtobridgetwoormoread
5、jacentmetallizationareas,andthatcannotberemovedContamination or Foreign material混淆外來 料子不透明橋梁ContaminationorForeignmaterialThereshallbenoconductive(opaque)ForeignMaterialunderthetopglassivationlayerofthediethatislargeenoughtobridgetwoormoreadjacentmetallizationareasThereshallbenoattachedorembeddedmat
6、erialindiethatbridgestwoactivecircuitelements.GaAs:Thereshallbenoattachedorembeddedmaterialindiethatreducesspacingoftwoactivecircuitelementsbygreaterthan50percent.Silicon:Thereshallbenoattachedorembeddedmaterialindiethatdoesnotprovideavisiblelineofseparationbetweentwoactivecircuitelements.附加在.深留 料子T
7、hereshallbenoliquiddrops,chemicalstains,inkorphotoresistontopofunglassivatedareasthatbridgestwoactivecircuitelements.(Liquiddrops,chemicalstains,inkorphotoresistontopofglassivatedportionofthedieareacceptable).液體 水滴 化學 污點光致抗蝕劑GaAs(requirementonly)Thereshallbenocrackingorchippingwithinactivecircuitare
8、a.Thereshallbenochipoutsthatextendbeyond50percentofthesubstratethicknessorcracksinsidewallsgreaterthan5.0mils.Silicon:Shallhaveavisiblelineofseparationbetweenbondpadsand/oroperatingmetallizationBridging and shorting連結 短 路墊ACTIVECIRCUITAllareasfromoutsideedgeofthebondpadsinward,exceptwherethereisanac
9、tivelineinthedesignlocatedbeyondtheoutsideedgeofthebondpads.DIFFUSION-Electricalisolationofoneormoreactivecircuits.GLASSIVATIONToplayeroftransparentinsulatingmaterialthatcoversactiveareaexceptforbondpads.PASSIVATIONLAYER-Insulatingmaterialondiepriortodepositionofmetalorbetweenmetallayers.Note:Somedi
10、ebydesignmaynothaveaglassivationlayer.GlassivationThereshallbenocrazingorglassivationdamagethatprohibitsvisualinspection.Thereshallbenocrazingorvoidsoverafilmresistor.Thereshallbenoliftingorpeelingmorethan1.0milinsidetheactiveareasfromthedesignededgeoftheglassivation.玻璃鈍化Thereshallbenoglassivationvo
11、ids,cracks(notcrazing)orscratchesthatexposestwoormoreadjacentactivemetallizationpaths.Thereshallbenounglassivatedareagreaterthan5.0mils.Thereshallbenounglassivatedareainsideofactiveareawhichexposesbaresemiconductormaterial.Thereshallnotbeglassivationovermorethan25percentofbondpad.洞穴 裂縫Thereshallbeno
12、diffusionfaultthatallowsbridgingbetweendiffusedareas.放散Thereshallbenobreaksindiffusion(exceptisolationwallsaroundunusedareasorunusedbondingpads).Thereshallbenoreductionofdiffusiongreaterthan75percent(50percentforresistors)oforiginalwidth.(exceptisolationwallsaroundunusedareasorunusedbondingpads)Ther
13、eshallbenoabsenceofglassivationoverjunctionlinesVoidsinthebondingpadshallnotreducemetallizationbymorethan25percentVoidsinthefilletareashallnotreducethemetallizationpathwidthconnectingthebondtotheinterconnectingmetallizationtolessthan50percentofthenarrowestenteringmetallizationstripewidth.洞穴Scratches
14、,probemarks,etc.inbondpadsshallnotremovemorethan50percentofthemetalorexposeunderlyingmaterial探討 印子在下面的Scratchesinmetaltracesshallnotresultinanyshorts.ThereshallbenoscratchesinmetaltracesthatresultinapossiblelayertolayershortScratchesorvoidsonmetaltracesshallnotbegreaterthan50percentofthetracewidth“W
15、”.Groundingareasmayhavesmallvoidsinthetopmetallizationlayer.Holesshallnotpenetratesub-layers.Note:Adjustingofthemicroscopefocusordarkvisionwillhelpindeterminingifsub-layersarepenetrated.Thereshallbenovoidsinanycapacitors.Activecircuitmetallizationshallhavenodelamination,blistering,orpeelinginglassiv
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