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1、1These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on)and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers,PCMCIA card
2、s,cellular and cordless telephones.N-Channel Logic Level MOSFETLow rDS(on)provides higher efficiency and extends battery lifeLow thermal impedance copper leadframeTSOP-6 saves board spaceFast switching speedHigh performance trench technologyNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width lim
3、ited by maximum junction temperatureVDS(V)rDS(on)()ID(A)0.027 VGS=10 V6.30.035 VGS=4.5V5.5PRODUCT SUMMARY30Symbol Maximum UnitsVDS30VGS20TA=25oC6.3TA=70oC5.2IDM20IS1.3ATA=25oC1.6TA=70oC1.0TJ,Tstg-55 to 150oCPower DissipationaPDOperating Junction and Storage Temperature RangeWContinuous Source Curren
4、t(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageContinuous Drain CurrentaIDASymbolMaximumUnitsMaximum Junction-to-Ambientat=5 secRTHJA78.0oC/WTHERMAL RESISTANCE RATINGSParameter123456F Si 34 24 DV/MC34
5、 24 DV 2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxGate-Body LeakageIGSSVDS=0 V,VGS=20 V100nAVDS=24 V,VGS=0 V1VDS=24 V,VGS=0 V,TJ=55oC10Gate-Threshold VoltageVGS(th)VDS=VGS,ID=250 uA1.03.0VVGS=10 V,ID=6.3 A27VGS=10 V,ID=6.3 A TJ=55oC39V
6、GS=4.5 V,ID=5.5 A35Forward TranconductanceAgfsVDS=10 V,ID=6.3 A45SOn-State Drain CurrentAID(on)VDS=5 V,VGS=10 V20ADiode Forward VoltageVSDIS=1.3 A,VGS=0 V0.75VTotal Gate ChargeQg9Gate-Source ChargeQgs2.9Gate-Drain ChargeQgd3.2Turn-On Delay Timetd(on)6Rise Timetr10Turn-Off Delay Timetd(off)18Fall-Tim
7、etf5DynamicbVDS=15 V,VGS=5 V,ID=6.3 A RL=6 nCSwitching CharacteristicsVDS=15 V,RL=6,ID=1 A,VGEN=10 VnsSwitch Off CharacteristicsZero Gate Voltage Drain CurrentIDSSuADrain-Source On-ResistanceArDS(on)mSwitch On CharacteristicsSPECIFICATIONS(TA=25oC UNLESS OTHERWISE NOTED)ParameterSymbolTest Condition
8、sLimitsUnitFREESCALE reserves the right to make changes without further notic e to any products herein.freescale makes no warranty,representation or guarantee regarding the suitability of its products for any particular purpose,nor does freescale assume any liability arising ou t of the application
9、or use of any product or circuit,and specifically disclaims any and all liability,including without limitation special,consequential or incidental damages.“Typical”parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual per
10、formance may vary over time.All operating parameters,including“Typicals”must be validated for each customer application by customers technical experts.freescale does not convey any license under its patent rights nor the rights of others.freescale products are not designed,intended,or authorized for
11、 use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life,or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.Should Buyer purchase or us
12、e freescale products for any such unintended or unauthorized application,Buyer shall indemnify and hold freescaleand its officers,employees,subsidiaries,affiliates,and distributors harmless against all claims,costs,damages,and expenses,and reasonable attorney fees arising out of,directly or indirect
13、ly,any claim of personal injury or death associated with such unintended or unauthorized use,even if such claim alleges that freescale was negligent regarding the design or manufacture of the part.freescale is an Equal Opportunity/Affirmative Action Employer.F Si 34 24 DV/MC34 24 DV 3Typical Electri
14、cal Characteristics(N-Channel)Figure 1.On-Region CharacteristicsFigure 2.On-Resistance Variation with Drain Current and Gate VoltageFigure 3.On-Resistance Variationwith TemperatureFigure 4.On-Resistance Variation withGate to Source VoltageFigure 5.Transfer CharacteristicsFigure 6.Body Diode Forward VoltageVariation with Source Current andTemperature F Si 34 24 DV/MC34 24 DV 4Typical Electrical Characteristics(N-Channel)Normalized Thermal Transient Junction to AmbientFigure 11.Transient Thermal Response CurveF Si 34 24 DV/MC34 24 DV 5Package InformationTSOP-6:6LEADF Si 34 24 DV/MC34 24 DV