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1、 SOT-23 Plastic-Encapsulate Transistors BCW68 TRANSISTOR(PNP)FEATURES Complementary to BCW66,BCW68 is subdivided into three groups F,G and H according to its DC current gain.MAXIMUM RATINGS(Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBOCollector-Base Voltage-60 V VCEOCollector-Emitter
2、 Voltage-45 V VEBOEmitter-Base Voltage-5 V ICCollector Current-Continuous-0.8 A PCCollector Power Dissipation 0.33 W TjJunction Temperature 150?TstgStorage Temperature-55 +150ELECTRICAL CHARACTERISTICS(Ta=25?unless otherwise specified)Parameter Symbol Test conditions Min Typ Max Unit Collector-base
3、breakdown voltage V(BR)CBO IC=-10?A,IE=0-60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0-45 V Emitter-base breakdown voltage V(BR)EBO IE=-10?A,IC=0-5 V Collector cut-off current ICBO VCB=-45 V,IE=0 -0.02?A Collector cut-off current IEBO VEB=-4 V,IC=0 -0.02?A hFE1 VCE=-10V,IC=-0.1mA F
4、 G H35 50 80 hFE2 VCE=-1V,IC=-10mA F G H75 120 180 hFE3 VCE=-1V,IC=-100mA F G H100 160 250 250 400 630 DC current gain hFE4 VCE=-2V,IC=-500mA F G H35 60 100 IC=-100mA,IB=-10mA -0.3 V Collector-emitter saturation voltage VCE(sat)IC=-500mA,IB=-50mA -0.7 V IC=-100mA,IB=-10mA -1.25 V Base-emitter satura
5、tion voltage VBE(sat)IC=-500mA,IB=-50mA -2 V Transition frequency fT VCE=-5V,IC=-50mA,f=20MHz 200 MHz Output capacitance Cob VCB=-10V,IE=0,f=1MHz 6 pF Input capacitance Cib VEB=-0.5V,IE=0,f=1MHz 60 pF SOT-23 1.BASE 2.EMITTER 3.COLLECTOR?C,May,2013MARKINGRankFGHRange100-250160-400 250-630MarkingDFDGD
6、H-0.1-1-10110100-1-10-100050100150200250300-0.1-1-10-10010020030040050060070080002550751001251500.00.10.20.30.4-0.1-1-10-100-0.0-0.2-0.4-0.6-0.8-1.0-1.2-0.1-1-10-100-0-100-200-300-400-500-0-1-2-3-4-5-6-7-8-0-50-100-150-200-250-300-350f=1MHzIE=0/IC=0Ta=25oC BCW68REVERSE VOLTAGE V (V)CAPACITANCE C (pF
7、)VCB/VEBCob/Cib CibCob-20TRANSITION FREQUENCY fT (MHz)COLLECTOR CURRENT IC (mA)COMMON EMITTERVCE=-5VTa=25oCICfT -800COMMON EMITTERVCE=-1VTa=100oCTa=25oCCOLLECTOR CURRENT IC (mA)DC CURRENT GAIN hFEIChFE COLLECTOR POWER DISSIPATION Pc (W)AMBIENT TEMPERATURE Ta ()?Pc Ta0.33-800COLLECTOR CURRENT IC (mA)
8、BASE-EMITTER SATURATIONVOLTAGE VBEsat (V)Ta=25?Ta=100?=10ICVBEsat -800Ta=25?Ta=100?=10VCEsat ICCOLLECTOR-EMITTER SATURATIONVOLTAGE VCEsat (mV)COLLECTOR CURRENT IC (mA)COMMONEMITTERTa=25?-800uA-640uA-720uA-560uA-480uA-400uA-320uA-240uA-160uAIB=-80uACOLLECTOR-EMITTER VOLTAGE VCE (V)COLLECTOR CURRENT IC (mA)Static CharacteristicC,May,2013