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1、1P-Channel 30-V(D-S)MOSFETFEATURESHalogen-free According to IEC 61249-2-21AvailableTrenchFET Power MOSFET100%Rg Tested100%UIS TestedAPPLICATIONSLoad Switches-Notebook PCs-Desktop PCsPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)dQg(Typ.)-300.0125 at VGS=-10 V-11.622 nC0.018 at VGS=-4.5 V-10Notes:a.Surface mou
2、nted on 1 x 1 FR4 board.b.t=10 s.c.Maximum under Steady State conditions is 85 C/W.d.Based on TC=25 C.ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise notedParameterSymbolLimitUnitDrain-Source Voltage VDS-30VGate-Source Voltage VGS 25Continuous Drain Current(TJ=150 C)TC=25 CID-11.6ATC=70 C-10.5TA=2
3、5 C-8.7a,bTA=70 C-7.7a,bPulsed Drain CurrentIDM-50Continuous Source-Drain Diode CurrentTC=25 CIS-4.6TA=25 C2.0a,bAvalanche CurrentL=0.1 mHIAS-20Single-Pulse Avalanche EnergyEAS20mJMaximum Power DissipationTC=25 CPD5.6WTC=70 C3.6TA=25 C2.5a,bTA=70 C1.6a,bOperating Junction and Storage Temperature Ran
4、ge TJ,Tstg-55 to 150CTHERMAL RESISTANCE RATINGSParameterSymbol Typical MaximumUnitMaximum Junction-to-Ambienta,ct 10 sRthJA3950C/WMaximum Junction-to-FootSteady State RthJF1822S G D P-Channel MOSFET SSDDDSGDSO-85678Top View2341 DTM44072Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed
5、by design,not subject to production testing.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of
6、the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-30VVDS Temperature
7、CoefficientVDS/TJID=-250 A-31mV/CVGS(th)Temperature CoefficientVGS(th)/TJ5.5Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1.0-3.0VGate-Source LeakageIGSSVDS=0 V,VGS=25 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-30 V,VGS=0 V-1AVDS=-30 V,VGS=0 V,TJ=55 C-5On-State Drain CurrentaID(on)VDS -1
8、0 V,VGS=-10 V-30ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-10 A 0.0110.0125VGS=-4.5 V,ID=-7 A 0.0120.018Forward Transconductanceagfs VDS=-10 V,ID=-10 A 23SDynamicbInput CapacitanceCiss VDS=-15 V,VGS=0 V,f=1 MHz1960pFOutput CapacitanceCoss 380Reverse Transfer CapacitanceCrss 325Total Gate
9、 ChargeQg VDS=-15 V,VGS=-10 V,ID=-10 A4365nCVDS=-15 V,VGS=-4.5 V,ID=-10 A2233Gate-Source ChargeQgs6Gate-Drain ChargeQgd 11Gate ResistanceRgf=1 MHz0.31.32.5Turn-On Delay Timetd(on)VDD=-15 V,RL=3 ID -5 A,VGEN=-10 V,Rg=1 1122nsRise Timetr1325Turn-Off DelayTimetd(off)3250Fall Timetf918Turn-On Delay Time
10、td(on)VDD=-15 V,RL=3 ID -5 A,VGEN=-4.5 V,Rg=1 4470Rise Timetr100160Turn-Off DelayTimetd(off)2850Fall Timetf1530Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C-4.6APulse Diode Forward CurrentISM-50Body Diode VoltageVSDIS=-2 A,VGS=0 V-0.75-1.2VBody Diode Reverse R
11、ecovery TimetrrIF=-2 A,dI/dt=100 A/s,TJ=25 C2845nsBody Diode Reverse Recovery ChargeQrr2040nCReverse Recovery Fall Timeta13nsReverse Recovery Rise Timetb15 DTM44073TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsOn-Resistance vs.Drain CurrentGate Charge0102030405060012345VDS
12、-Drain-to-Source Voltage(V)-Drain Current(A)IDVGS=10 V thru 5 VVGS=4 VVGS=3 V0.000.010.020.030.040.050102030405060-On-Resistance()RDS(on)ID-Drain Current(A)VGS=10 VVGS=4.5 V024681001020304050ID=10 A-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VGSVDS=10 VVDS=20 VVDS=15 VTransfer CharacteristicsC
13、apacitanceOn-Resistance vs.Junction Temperature012345012345VGS-Gate-to-Source Voltage(V)-Drain Current(A)IDVGS=125 CVGS=25 CVGS=-55 CCrss060012001800240030000612182430CissVDS-Drain-to-Source Voltage(V)C-Capacitance(pF)Coss0.60.81.01.21.41.6-50-250255075100125150TJ-Junction Temperature(C)(Normalized)
14、-On-ResistanceRDS(on)VGS=-10 VID=10 AVGS=-4.5 V DTM44074TYPICAL CHARACTERISTICS 25 C,unless otherwise noted Source-Drain Diode Forward VoltageThreshold Voltage0.00.20.40.60.81.01.2VSD-Source-to-Drain Voltage(V)-Source Current(A)IS10.010.0010.110100TJ=25 CTJ=150 C-0.4-0.20.00.20.40.60.8-50-2502550751
15、00125150ID=250 AVariance(V)VGS(th)TJ-Temperature(C)ID=5 mAOn-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-Ambient0.000.020.040.060.080.100246810-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)TJ=25 CTJ=125 CID=10 A01020304050Power(W)Time(s)1010000.10.010.0011001Safe Operati
16、ng Area0.0111000.01-Drain Current(A)ID0.1VDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specified1 ms10 ms100 ms0.111010TA=25 CSingle PulseLimited by RDS(on)*1 s10 sDC100 DTM44075TYPICAL CHARACTERISTICS 25 C,unless otherwise noted*The power dissipation PD is based on TJ(max)=150 C,
17、using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Current Derating*036912150255075100125150TC-Case Temperature(C)I
18、D-Drain Current(A)Power,Junction-to-Foot0.01.42.84.25.67.00255075100125150TC-Case Temperature(C)Power Dissipation(W)Power Derating,Junction-to-Ambient0.00.40.81.21.62.00255075100125150TA-Ambient Temperature(C)Power Dissipation(W)DTM44076TYPICAL CHARACTERISTICS 25 C,unless otherwise noted Normalized
19、Thermal Transient Impedance,Junction-to-Ambient10-310-2110100010-110-41000.20.10.05Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Single Pulset1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=85 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedDuty Cycle=0.50.02Normal
20、ized Thermal Transient Impedance,Junction-to-Foot10-310-201110-110-40.20.1Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.010.02Single Pulse0.05 DTM44071DIMMILLIMETERSINCHESMinMaxMinMaxA1.351.750.0530.069A10.100.200.0040.008B0.350.510.0140.020C0.190.25
21、0.00750.010D4.805.000.1890.196E3.804.000.1500.157e1.27 BSC0.050 BSCH5.806.200.2280.244h0.250.500.0100.020L0.500.930.0200.037q0808S0.440.640.0180.026ECN:C-06527-Rev.I,11-Sep-06DWG:549843125687HEh x 45CAll Leadsq0.101 mm0.004LBA1AeD0.25 mm(Gage Plane)SOIC(NARROW):8-LEADJEDEC Part Number:MS-012SPackage Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-80.246(6.248)Recommended Minimum PadsDimensions in Inches/(mm)0.172(4.369)0.152(3.861)0.047(1.194)0.028(0.711)0.050(1.270)0.022(0.559)Return to IndexReturn to IndexApplication Note