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1、1These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on)and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers,PCMCIA card
2、s,cellular and cordless telephones.VDS(V)rDS(on)(O H M)ID(A)0.130 VG S=-4.5V2.50.190 VG S=-2.5V1.9-20MO SF E T P RO DU C T SU MMA RYP-Channel 20-V(D-S)MOSFET With Schottky DiodeLow rDS(on)provides higher efficiency and extends battery lifeLow thermal impedance copper leadframeTSOP-6 saves board spac
3、eFast switching speedHigh performance trench technologyNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width limited by maximum junction temperatureSymbolTypMaxt=10 sec93110Steady State130150THERMAL RESISTANCE RATINGSMaximum Junction-to-AmbientaoC/WRthJAParameterVf(V)Diode F orw ard V oltage200.48
4、V 1.0A1.0SC H O T T K Y P RO DU C T SU MMA RYVK A(V)IF(A)Sym bol Maxim um UnitsVDS-20VKA20VGS8TA=25oC2.5TA=70oC1.9IDM10IS-1.6IF0.5IFM8TA=25oC1.15TA=70oC0.7TA=25oC1.0TA=70oC0.6TJ,Tstg-55 to 150oCM axim um Power Dissipation(Schottky)aOperating Junction and Storage Tem perature RangePDWA BSOLUTE MA XIM
5、UM RA TINGS(TA=25 oC UNLESS OTHERW ISE NOTED)Param eterPulsed Drain Current(M OSFET)bG ate-Source Voltage(M OSFET)Reverse Voltage(Schottky)Continuous Drain Current(TJ=150oC)(M OSFET)aIDADrain-Source Voltage(M OSFET)Continuous Source Current(M OSFET Diode Conduction)aAverage Forward Current(Schottky)
6、M axim um Power Dissipation(M OSFET)aPulsed Forward Current(Schottky)VSDGP-Channel MOSFETKATSOP-6Top View1234KN/CD65GASF Si 38 51DV/MC38 51DV2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxIF=0.5 A0.48VIF=0.5 A,TJ=125oC0.4VVr=30 V0.1Vr=30 V
7、,TJ=75oC1Vr=30 V,TJ=125oC10Junction CapacitanceCTVr=10 V31pFForward Voltage DropVFSCHOTTKY SPECIFICATIONS(TA=25oC UNLESS OTHERWISE NOTED)mAIrmMaximum Reverse Leakage CurrentTest ConditionsSymbolParameterLimitsUnitMinTy pMaxGate-Threshold VoltageVGS(th)VDS=VGS,ID=-250 uA-0.4Gate-Body LeakageIGSSVDS=0
8、 V,VGS=+/-8 V100nAVDS=-16 V,VGS=0 V-1VDS=-16 V,VG S=0 V,TJ=55oC-10On-State Drain CurrentAID(on)VDS=-5 V,VGS=-4.5 V-5AVGS=-4.5 V,ID=-2.5 A0.130VGS=-2.5 V,ID=-1.9 A0.190Forward TranconductanceAgfsVDS=-5 V,ID=-2.5 A3SDiode Forward VoltageVSDIS=-1.6 A,VGS=0 V-0.70VT otal Gate ChargeQg6.0Gate-Source Char
9、geQgs0.80Gate-Drain ChargeQgd1.30T urn-On Delay Timetd(on)6.5Rise T imetr20T urn-Off Delay T imetd(off)31Fall-T imetf21VDD=-5 V,RL=5 OHM,VGEN=-4.5 V,RG=6 OHMnsDrain-Source On-State ResistanceADy nam icbVDS=-5 V,VGS=-4.5 V,ID=-2.5 AnCrDS(on)M OSFET SPECIFICATIONS(TA=25oC UNLESS OTHERW ISE NOTED)uAIDS
10、SZ ero Gate Voltage Drain CurrentStaticTest ConditionsSy m bolParam eterLim itsUnitF Si 38 51DV/MC38 51DVFREESCALE reserves the right to make changes without further notic e to any products herein.freescale makes no warranty,representation or guarantee regarding the suitability of its products for a
11、ny particular purpose,nor does freescale assume any liability arising ou t of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation special,consequential or incidental damages.“Typical”parameters which may be provided in freesc
12、ale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.All operating parameters,including“Typicals”must be validated for each customer application by customers technical experts.freescale does not convey any license under its patent
13、rights nor the rights of others.freescale products are not designed,intended,or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life,or for any other application in which the failure of the freescale product
14、 could create a situation where personal injury or death may occur.Should Buyer purchase or use freescale products for any such unintended or unauthorized application,Buyer shall indemnify and hold freescaleand its officers,employees,subsidiaries,affiliates,and distributors harmless against all clai
15、ms,costs,damages,and expenses,and reasonable attorney fees arising out of,directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use,even if such claim alleges that freescale was negligent regarding the design or manufacture of the part.freescale
16、 is an Equal Opportunity/Affirmative Action Employer.3Typical Electrical CharacteristicsFigure 2.On-Resistance Variation with Drain Current and Gate VoltageFigure 1.On-Region CharacteristicsFigure 4.On-Resistance Variation withGate to Source VoltageFigure 3.On-Resistance Variationwith TemperatureFig
17、ure 6.Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5.Transfer CharacteristicsF Si 38 51DV/MC38 51DV4Typical Electrical CharacteristicsNormalized Thermal Transient Junction to AmbientFigure 8.Capacitance Characteristic Figure 7.Gate Charge Characteristic Figure 10.Single Pulse Maximum Power Dissipation Figure 9.Maximum Safe Operating Area F Si 38 51DV/MC38 51DV5Package InformationTSOP-6:6LEADF Si 38 51DV/MC38 51DV