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1、1FEATURESHalogen-freePRODUCT SUMMARY VDS(V)RDS(on)()ID(A)-200.045 at VGS=-4.5 V-4.20.072 at VGS=-2.5 V-3.6S*GDP-Channel MOSFETNotes:a.Surface Mounted on 1 x 1 FR4 board.ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise notedParameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS-20VGate-Sou
2、rce Voltage VGS 12Continuous Drain Current(TJ=150 C)aTA=25 CID-4.2-4.0ATA=70 C-3.9-3.2Pulsed Drain Current(10 s Pulse Width)IDM-20Continuous Source Current(Diode Conduction)aIS-1.35-0.95Maximum Power DissipationaTA=25 CPD1.51.05WTA=70 C1.00.67Operating Junction and Storage Temperature Range TJ,Tstg-
3、55 to 150CTHERMAL RESISTANCE RATINGS ParameterSymbol TypicalMaximumUnitMaximum Junction-to-Ambientat 10 sRthJA6583C/WSteady State100120Maximum Junction-to-Foot(Drain)Steady StateRthJF4352RoHSCOMPLIANT1TO-226AA(TO-92)Top ViewSDG23P-Channel 20-V(D-S)MOSFET DTE23112Notes:a.Pulse test;pulse width 300 s,
4、duty cycle 2%.b.Guaranteed by design,not subject to production testing.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in t
5、he operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.TYPICAL CHARACTERISTICS 25 C,unless otherwise notedSPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.Un
6、itStaticGate Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-0.6-1.5VGate-Body LeakageIGSSVDS=0 V,VGS=8 V 100 nAZero Gate Voltage Drain CurrentIDSSVDS=-12 V,VGS=0 V-1AVDS=-12 V,VGS=0 V,TJ=70 C-25On-State Drain CurrentaID(on)VDS=-5 V,VGS=-4.5 V-20ADrain-Source On-State ResistanceaRDS(on)VGS=-4.5 V,ID=-4.2
7、A 0.0320.045VGS=-2.5 V,ID=-3.6 A 0.0530.072Forward TransconductanceagfsVDS=-5 V,ID=-4.2 A 14SDiode Forward VoltageaVSDIS=-1.35 A,VGS=0 V-0.77-1.1VDynamicbTotal Gate ChargeQg VDS=-6 V,VGS=-4.5 V,ID=-4.2 A 1015nCGate-Source ChargeQgs 1.8Gate-Drain ChargeQgd 3Gate ResistanceRgf=1 MHz7.7Turn-On Delay Ti
8、metd(on)VDD=-6 V,RL=6 ID -1 A,VGEN=-4.5 V,Rg=6 4570nsRise Timetr6090Turn-Off Delay Timetd(off)70110Fall Timetf3555Source-Drain Reverse Recovery TimetrrIF=-1.35 A,di/dt=100 A/s65Output Characteristics048121620012345VGS=4.5 thru 3 VVDS -Drain-to-Source Voltage(V)-Drain Current(A)ID2.5 V 2 VTransfer Ch
9、aracteristics0481216200.00.51.01.52.02.53.0TC=125 C-55 C 25 CVGS -Gate-to-Source Voltage(V)-Drain Current(A)ID DTE23113TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOn-Resistance vs.Drain CurrentGate ChargeSource-Drain Diode Forward Voltage-RDS(on)0.000.020.040.060.080.10048121620ID -Drain Curr
10、ent(A)VGS=4.5 VVGS=2.5 V012345603691215VDS=6 VID=4.8 A-Gate-to-Source Voltage(V)Qg -Total Gate Charge(nC)VGS0.00.20.40.60.81.01.2TJ=25 C100.1VSD -Source-to-Drain Voltage(V)-Source Current(A)ISTJ=150 C1CapacitanceOn-Resistance vs.Junction TemperatureOn-Resistance vs.Gate-to-Source Voltage030060090012
11、001500024681012VDS -Drain-to-Source Voltage(V)CrssC -Capacitance(pF)CossCiss0.60.81.01.21.41.6-50-250255075100125150VGS=4.5 VID=4.8 ATJ-Junction Temperature(C)RDS(on)-On-Resistance(Normalized)0.000.030.060.090.120.150123456ID=4.8 A-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)DTE23114TYPICAL C
12、HARACTERISTICS 25 C,unless otherwise notedThreshold Voltage-0.2-0.10.00.10.20.30.4-50-250255075100125150ID=250 AVariance(V)VGS(th)TJ-Temperature(C)Single Pulse Power,Junction-to-Ambient030501020Power (W)Time(s)4010110-210-310-1Safe Operating Area,Junction-to-Case10010.11101000.0110-Drain Current(A)I
13、D0.1Limitedby R *DS(on)TC=25 CSingle Pulse10 ms100 ms1 s10 sDC1 msVDS -Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specifiedNormalized Thermal Transient Impedance,Junction-to-Ambient10-310-211060010-110-4100210.10.010.20.10.050.02Single PulseDuty Cycle=0.5Square Wave Pulse Duration
14、(s)Normalized Effective TransientThermal Impedance1.Duty Cycle,D=2.Per Unit Base=RthJA=100 C/W3.TJM-TA=PDMZthJA(t)t1t2t1t2Notes:4.Surface MountedPDM DTE23115TYPICAL CHARACTERISTICS 25 C,unless otherwise notedNormalized Thermal Transient Impedance,Junction-to-Foot10-310-211010-110-4210.10.010.20.10.0
15、50.02Single PulseDuty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance DTE2311Mechanical Dimensions0.46 0.101.27TYP(R2.29)3.86MAX1.27 0.201.27TYP1.27 0.203.60 0.2014.47 0.401.02 0.10(0.25)4.58 0.204.58+0.250.150.38+0.100.050.38+0.100.05TO-92Dimensions in Millimeters?1