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1、?1Complementary 20-V(D-S)Low-Threshold MOSFETPRODUCT SUMMARYChannelVDS(V)rDS(on)(?)ID(mA)N-Channel202.0 VGS=4.5 V250N-Channel202.5 VGS=2.5 V150P Channel203.8 VGS=4.5 V180P-Channel205.0 VGS=2.5 V100SOT-363SC-70(6-Leads)S113G12D2645D1G2S2Top ViewMarking CodeREXXLot Traceabilityand Date CodePart#CodeYY
2、ABSOLUTE MAXIMUM RATINGS(TA=25?C UNLESS OTHERWISE NOTED)ParameterSymbolN-ChannelP-ChannelUnitDrain-Source VoltageVDS2020VGate-Source VoltageVGS?8?8VContinuous Drain Current(TJ=150?C)aTA=25?CID250180Continuous Drain Current(TJ=150?C)aTA=70?CID200140mAPulsed Drain CurrentIDM500500Maximum Power Dissipa
3、tionaTA=25?CPD0.20WMaximum Power DissipationaTA=70?CPD0.13WOperating Junction and Storage Temperature RangeTJ,Tstg55 to 150?CTHERMAL RESISTANCE RATINGSParameterSymbolLimitUnitMaximum Junction-to-AmbientaRthJA625(Total)?C/WNotesa.Surface Mounted on FR4 Board,t?10 FreescaleSi1501DL/MC1501DL 2SPECIFICA
4、TIONS(TJ=25?C UNLESS OTHERWISE NOTED)ParameterSymbolTest ConditionMinTypMaxUnitStatic Drain Source Breakdown VoltageV(BR)DSSVGS=0 V,ID=10?AN-Ch2024Drain-Source Breakdown VoltageV(BR)DSSVGS=0 V,ID=10?AP-Ch2024VGate Threshold VoltageVGS(h)VDS=VGS,ID=50?AN-Ch0.40.91.5VGate Threshold VoltageVGS(th)VDS=V
5、GS,ID=50?AP-Ch0.40.91.5Gate Body LeakageIGSSVDS=0 V VGS=?8 VN-Ch?2?100Gate-Body LeakageIGSSVDS=0 V,VGS=?8 VP-Ch?2?100nAVDS=20 V,VGS=0 VN-Ch0.001100nAZero Gate Voltage Drain CurrentIDSSVDS=20 V,VGS=0 VP-Ch0.001100Zero Gate Voltage Drain CurrentIDSSVDS=20 V,VGS=0 V,TJ=55?CN-Ch1?AVDS=20 V,VGS=0 V,TJ=55
6、?CP-Ch1?AVDS?2.5 V,VGS=5.0 VN-Ch120On State Drain CurrentaID()VDS?2.5 V,VGS=5.0 VP-Ch120mAOn-State Drain CurrentaID(on)VDS?4.5 V,VGS=8.0 VN-Ch400mAVDS?4.5 V,VGS=8.0 VP-Ch400VGS=2.5 V,ID=150 mAN-Ch1.62.5Drain Source On State ResistancearDS()VGS=2.5 V,ID=75 mAP-Ch45?Drain-Source On-State ResistancearD
7、S(on)VGS=4.5 V,ID=250 mAN-Ch1.22.0?VGS=4.5 V,ID=180 mAP-Ch2.63.8Forward TransconductanceagfVDS=2.5 V,ID=50 mAN-Ch150mSForward TransconductanceagfsVDS=2.5 V,ID=50 mAP-Ch200mSDiode Forward VoltageaVSDIS=50 mA,VGS=0 VN-Ch0.71.2VDiode Forward VoltageaVSDIS=50 mA,VGS=0 VP-Ch0.71.2VDynamicb Total Gate Cha
8、rgeQN-Ch300450Total Gate ChargeQgN-ChannelP-Ch300450Gate Source ChargeQN-ChannelVDS=5 V,VGS=4.5 V,ID=100 mA N-Ch25pCGate-Source ChargeQgsP-ChannelV V V V I 100 AP-Ch25pCGate Drain ChargeQdP ChannelVDS=5 V,VGS=4.5 V,ID=100 mAN-Ch100Gate-Drain ChargeQgdP-Ch100Input CapacitanceCiN-Ch15Input Capacitance
9、CissN-ChannelP-Ch15Output CapacitanceCN-ChannelVDS=5 V,VGS=0 VN-Ch11pFOutput CapacitanceCossP-ChannelV V V 0 VP-Ch11pFReverse Transfer CapacitanceCP ChannelVDS=5 V,VGS=0 VN-Ch5Reverse Transfer CapacitanceCrssP-Ch5SwitchingTurn On Timetd()N-Ch712Turn-On Timetd(on)N ChannelP-Ch712Rise TimetN-ChannelVD
10、D=3 V,RL=100?N-Ch2535Rise TimetrVDD=3 V,RL=100?ID?0.25 A,VGEN=4.5 V,Rg=10?P-Ch2535nsTurn Off Delay Timetd(ff)gP-ChannelV 3 V R 100?N-Ch1930nsTurn-Off Delay Timetd(off)P ChannelVDD=3 V,RL=100?ID?0.25 A,VGEN=4.5 V,Rg=10?P-Ch1930Fall TimetfID?0.25 A,VGEN=4.5 V,Rg=10?N-Ch915Fall TimetfP-Ch915Notesa.Guar
11、anteed by design,not subject to production testing.b.Pulse test;pulse width?300?s,duty cycle?2% FreescaleSi1501DL/MC1501DL?3TYPICAL CHARACTERISTICS(25?C UNLESS NOTED)N-CHANNEL0.00.20.40.60.80.00.51.01.52.02.53.001234567012340.000.250.500.751.001.2501234024681001002003004005006000.60.81.01.21.41.6502
12、5025507510012515025?CTC=55?CCrssCossVDS=6 VID=100 mAVGS=4.5 VID=100 m AVGS=4.5 VVGS=2.5 V2 V125?C2.5 VOutput CharacteristicsTransfer CharacteristicsGate ChargeOn-Resistance vs.Drain CurrentVDS Drain-to-Source Voltage(V)Drain Current(A)IDVGS Gate-to-Source Voltage(V)Drain Current(A)ID Gate-to-Source
13、Voltage(V)Qg Total Gate Charge(pC)VDS Drain-to-Source Voltage(V)C Capacitance(pF)VGS On-Resistance(rDS(on)?)ID Drain Current(A)CapacitanceOn-Resistance vs.Junction TemperatureTJ Junction Temperature(?C)(Normalized)On-Resistance(rDS(on)?)3 VVGS=3.5 thru 5 V1.5 V1 V01020304050048121620C FreescaleSi150
14、1DL/MC1501DL 4TYPICAL CHARACTERISTICS(25?C UNLESS NOTED)N-CHANNEL0.40.30.20.10.00.10.250250255075100125150ID=50?A1.20246802468100.0013ID=250 mA0.000.30.9TJ=25?CTJ=125?CThreshold VoltageVariance(V)VGS(th)TJ Temperature(?C)Source-Drain Diode Forward VoltageOn-Resistance vs.Gate-to-Source Voltage On-Re
15、sistance(rDS(on)?)VSD Source-to-Drain Voltage(V)VGS Gate-to-Source Voltage(V)Source Current(A)IS0.10.0110.6TJ=55?C FreescaleSi1501DL/MC1501DL?5TYPICAL CHARACTERISTICS(25?C UNLESS NOTED)P-CHANNEL0.00.10.20.30.40.50.00.51.01.52.02.53.0024680.00.51.01.52.02.53.00.00.20.40.60.81.01.201234024681001002003
16、004005006000.60.81.01.21.41.650250255075100125150091827364503691225?CTC=55?CCrssCossCissVDS=6 VID=80 mAVGS=4.5 VID=180 m AVGS=4.5 VVGS=2.5 V2 V125?C2.5 VOutput CharacteristicsTransfer CharacteristicsGate ChargeOn-Resistance vs.Drain CurrentVDS Drain-to-Source Voltage(V)Drain Current(A)IDVGS Gate-to-
17、Source Voltage(V)Drain Current(A)ID Gate-to-Source Voltage(V)Qg Total Gate Charge(pC)VDS Drain-to-Source Voltage(V)C Capacitance(pF)VGS On-Resistance(rDS(on)?)ID Drain Current(A)CapacitanceOn-Resistance vs.Junction TemperatureTJ Junction Temperature(?C)(Normalized)On-Resistance(rDS(on)?)3 V3.5 V4 V5
18、 V4.5 V FreescaleSi1501DL/MC1501DL 6TYPICAL CHARACTERISTICS(25?C UNLESS NOTED)P-CHANNEL0.20.10.00.10.20.350250255075100125150ID=50?A1.501234561.01.52.02.53.03.54.04.50.0011ID=180 mA0.000.501TJ=150?CThreshold VoltageVariance(V)VGS(th)TJ Temperature(?C)Source-Drain Diode Forward VoltageOn-Resistance vs.Gate-to-Source Voltage On-Resistance(rDS(on)?)VSD Source-to-Drain Voltage(V)VGS Gate-to-Source Voltage(V)Source Current(A)IS0.10.01TJ=25?C FreescaleSi1501DL/MC1501DL