1N4148WS规格书.pdf

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1、 Dated:22/07/2010 Rev:01 SEMTECH ELECTRONICS LTD.Subsidiary of Sino-Tech International(BVI)Limited 1N4148WS Silicon Epitaxial Planar Switching Diode Features SOD-323 package Fast switching These diodes are also available in other case style including the DO-35 case with the type designation 1N4148,t

2、he MiniMELF case with the type designation LL4148 and the MicroMELF case with the type designation MCL4148.Absolute Maximum Ratings(Ta=25 OC)Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV)150 mA Surge Forward Current(t 1 s,T

3、j=25 OC)IFSM 350 mA Power Dissipation Ptot 200 mW Thermal Resistance from Junction to Ambient Air RJA 625 OC/W Junction Temperature Tj 150 OC Storage Temperature Range Tstg-65 to+150 OC Electrical Characteristics(Ta=25 OC)Parameter Symbol Max.Unit Forward Voltage at IF=10 mA VF 1 V Reverse Current a

4、t VR=20 V at VR=75 V at VR=20 V,Tj=150 OC IR 25 5 50 nA A A Total Capacitance at VR=0 V,f=1 MHz Ctot 4 pF Reverse Recovery Time at IF=10 mA to IR=1 mA,VR=6 V,RL=100 trr 4 ns Anode2Top View Marking Code:W2Simplified outline SOD-323 and symbol12PINNING1PINCathodeDESCRIPTIONW2 Dated:22/07/2010 Rev:01 S

5、EMTECH ELECTRONICS LTD.Subsidiary of Sino-Tech International(BVI)Limited 1N4148WS Forward characteristicsTj=100 CIF(mA)1010-1100-21VF(V)1Tj=25 C1021032Dynamic forward resistance vs.forward current2rF()51102-2101052251025310410IF(mA)-1101102Tj=25 Cf=1kHzReverse capacitance vs.reverse voltage 0.9Ctot(

6、VR)Ctot(0 V)0.7020.81.01.16VR(V)4810Tj=25 Cf=1MHzAmissible repetitive peak forward current vs.pulse duration0.1210-510552-4-3102-2105tp(s)1013254IFRM(A)452310032540.50.20.1V=0101052-122515 Dated:22/07/2010 Rev:01 SEMTECH ELECTRONICS LTD.Subsidiary of Sino-Tech International(BVI)Limited 1N4148WS PACKAGE OUTLINE Plastic surface mounted package;2 leads SOD-323 AmmUNITbDCEHEbADAcHEp1.100.800.400.250.150.101.801.601.351.152.802.30Ep

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