半导体器件基础优秀PPT.ppt

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1、半导体器件基础 第1页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices场效应晶体管，利用改变场效应晶体管，利用改变垂直于导电沟道的电场控垂直于导电沟道的电场控制沟道的导电能力，并实制沟道的导电能力，并实现放大作用现放大作用第2页，本讲稿共189页

2、Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices场效应晶体管管的工作电场效应晶体管管的工作电流由导体中单种多数载流流由导体中单种多数载流子输运，因此又称为子输运，因此又称为 单极型晶体管 (Unipolar Transistor)第3页，本讲稿共189页Chapt

3、er 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices按结构及工艺特点场效应按结构及工艺特点场效应晶体管一般可分成三类：晶体管一般可分成三类：第一类是表面场效应管，第一类是表面场效应管，通常采取绝缘栅的形式，通常采取绝缘栅的形式，称为绝缘栅场效应管称为绝缘栅场效应管 (IGFET

4、 )。第4页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices若半导体衬底与金属栅间若半导体衬底与金属栅间的绝缘介质层是的绝缘介质层是 Si02，即，即 “金属金属-氧化物氧化物-半导体半导体 ”(MOS)场效应晶体管，场效应晶体管，它是最重要的一

5、种绝缘栅它是最重要的一种绝缘栅场效应晶体管；场效应晶体管；第5页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices第二类是结型场效应管第二类是结型场效应管 (JFET )，一种采用，一种采用 pn 结势垒控制器件导电能结势垒控制器件导电能力的场效应

6、晶体管力的场效应晶体管;第6页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesN 型型衬底衬底P型栅区型栅区 P 型栅区型栅区 栅极栅极 栅极栅极 源源极极 漏漏极极 耗尽区耗尽区耗尽区耗尽区第7页，本讲稿共189页Chapter 4 Metal

7、 Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices第第三三类类是是薄薄膜膜场场效效应应晶晶体体管管(TFT)，结结构构及及原原理理与与IGFET 相相似似。TFT 采采用用蒸蒸发发工工艺艺将将半半导导体体、绝绝缘缘体体和和金金属属薄薄膜膜蒸蒸发发在在绝绝缘缘衬衬底底上上构构成成的的场场效应晶体管

8、。效应晶体管。第8页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices效应晶体管与双极型晶体效应晶体管与双极型晶体管相比有下述优点：管相比有下述优点：(1)(1)输入阻抗高达输入阻抗高达 10 9一一10 15(2)(2)噪声系数小噪声系数小第9页

9、，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices (3)(3)功耗小可制造高集功耗小可制造高集成度半导体的集成电路；成度半导体的集成电路；(4)(4)温度稳定性好温度稳定性好 多子多子器件，电学参数不随温度器件，电学参数不随温度变化；变化；(5)

10、(5)抗辐射能力强等。抗辐射能力强等。第10页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesMOS MOS 场效应晶体管的场效应晶体管的结构结构Structure of MOSFETMOS 场效应管的衬底材料场效应管的衬底材料可以是可以是 n

11、型半导体也可以型半导体也可以是是 p 型半导体。型半导体。第11页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices p 型衬底制成的器件，型衬底制成的器件，漏漏 -源区是源区是 n 型，称型，称 n 沟沟 MOS 场效应管。场效应管。n 型衬底材

12、料制成的器型衬底材料制成的器 件，漏件，漏 -源区是源区是 p 型，型，称称 p 沟沟 MOS 场效应管；场效应管；第12页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices p 沟沟 MOS 场效应管的工艺流程如下：场效应管的工艺流程如下：第13

13、页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices （1 1）一次氧化：取电阻率一次氧化：取电阻率为为5-10 cm 的的 n 型硅，型硅，按按 (100 )面进行切割、研面进行切割、研磨、磨、抛光、清洗然后用抛光、清洗然后用热氧化法生长一层热氧

14、化法生长一层 5000 以上的一次氧化层，如图以上的一次氧化层，如图 （a）；）；第14页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices（2 2）漏漏 -源扩散：将一次源扩散：将一次氧化后的片子进行光刻，氧化后的片子进行光刻，刻出漏刻出漏 -源

15、区后进行硼扩源区后进行硼扩散，形成两个散，形成两个 p+区，分区，分别称为源别称为源 (S )区区 和漏和漏 (D)区，如图区，如图（b）；）；第15页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices (3)(3)光刻栅区：刻去硅片光刻栅区：刻去

16、硅片上源和漏之间的氧化层，留上源和漏之间的氧化层，留出栅区，如图出栅区，如图（c）；）；第16页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices (4)(4)栅氧化：栅氧化：在干氧气在干氧气氛中生长厚度氛中生长厚度1500 2000 的优质氧化层

17、。这是制的优质氧化层。这是制作作 MOS管最关键的一项管最关键的一项工艺，栅氧化后的结构工艺，栅氧化后的结构如图如图 （d d）：）：第17页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices (5)(5)光刻引线孔、蒸铝、光刻引线孔、蒸铝、反刻、

18、合金化，如图反刻、合金化，如图（e）及及（f）；）；上述步骤总共用了四次光上述步骤总共用了四次光刻、一次扩级、一次蒸发刻、一次扩级、一次蒸发第18页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices采用采用 p 型衬底材料，制作型衬底材料，制作 n

19、 沟沟 MOS 场效应管，工艺场效应管，工艺流程与制作流程与制作 p 沟管基本相沟管基本相同。同。第19页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices第20页，本讲稿共189页Chapter 4 Metal Oxide-Semiconduct

20、or Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesN 型衬底型衬底P 型源区型源区 P 型漏区型漏区 第21页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field

21、Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devicesp 沟沟 MOS场效应管的示意场效应管的示意 第22页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Sem

22、iconductor DevicesM0S 场效应管的类型场效应管的类型Classification of MOSFET p沟增强型沟增强型衬底材料为衬底材料为 n 型型源区和漏区均为源区和漏区均为 p+型型导电沟道为导电沟道为 p 型型第23页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental

23、of Semiconductor Devices 栅栅极极电电压压为为零零时时，n 型型半半导导体体表表面面由由于于 Si-Si02 界界面面正正电电荷荷的的作作用用而而处处于于积积累累状态，不存在导电沟道。状态，不存在导电沟道。第24页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of S

24、emiconductor Devices 栅栅极极施施加加一一定定负负偏偏压压，且达到且达到 UT 值时，才形成值时，才形成 p 型型沟沟道道。栅栅极极负负偏偏压压增增大大，沟沟通通导导电电能能力力随随之之增增强强，因因此此称称为为p 沟沟增增强强型型管。管。第25页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesF

25、undamental of Semiconductor DevicesP 沟耗尽型沟耗尽型如如果果 p 沟沟 MOS 管管栅栅极极电电压压 UGS 0 时时已已经经存存在在p 型型导导电电沟沟道道，原原始始反反型型沟沟道道因因 n 型型半半导导体体表表面面耗耗尽尽而而形形成成，所以称为所以称为 p 沟耗尽型沟耗尽型 管。管。第26页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFund

26、amental of Semiconductor DevicesFundamental of Semiconductor Devices UGS 等于等于UP 时，表面导电时，表面导电沟道消失，通常称沟道消失，通常称 UP 为为夹断电压或截止电压，显，显然，然，UP 0。第27页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor De

27、vicesFundamental of Semiconductor Devices p 沟增强型管的沟增强型管的开启电压 (负值负值)和和 p 沟耗尽型管的沟耗尽型管的夹断电压 (正值正值)统称为统称为阈值电压。第28页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconduc

28、tor Devicesn 型型 Si(B)p+p+p+p+p 沟增强型沟增强型p 沟耗尽型沟耗尽型SDGBSDGBS G DS G D第29页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices n 沟增强型沟增强型衬底材料为衬底材料为 p 型型源区

29、和漏区均为源区和漏区均为 n+型型导电沟道为导电沟道为 n 型型第30页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices栅极电压为零时，由于氧栅极电压为零时，由于氧化层中正电荷的作用，半化层中正电荷的作用，半导体表面耗尽但未形成导导体表面耗尽但未

30、形成导电沟道。电沟道。UGS UT 时表面强反型，时表面强反型，形成形成 n 型沟道。型沟道。第31页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices此此时时加加在在栅栅极极上上的的电电压压 UT 即即 n 沟沟增增强强型型 MOS 管管的的开启

31、电压，UT 0。第32页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices n 沟耗尽型沟耗尽型如如 p 型衬底浓度较低氧化型衬底浓度较低氧化层中正电荷密度较大栅下层中正电荷密度较大栅下硅表面可能在硅表面可能在 UGS0 时就时就已满足强反型条件，

32、并形已满足强反型条件，并形成成n 型导电沟导。型导电沟导。第33页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices这种这种 MOS 管称为管称为n 沟道沟道耗尽型耗尽型 场效应管。场效应管。栅栅电电极极如如施施加加负负压压，抵抵消消氧氧化化层层中

33、中正正电电荷荷的的作作用用,表表面面能能带带下下弯弯程程度度减减小小，可可从从强强反反型型转转为为反反型型，甚甚至至为耗尽。为耗尽。第34页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices同样定义使原始同样定义使原始n 型表面型表面沟道消失所需的

34、栅极电压沟道消失所需的栅极电压为为夹断电压 UP。不过不过 n 沟耗尽型沟耗尽型 MOS 管的管的 UP 是是负值。负值。第35页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices UT 与与UP 统称为统称为 n 沟管的沟管的阈值电压。图示分别为

35、。图示分别为 n 沟沟 MOS 管的示意图和电管的示意图和电路符号。路符号。第36页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devicesp 型型 Si(B)n+n+n+n+n 沟增强型沟增强型n 沟耗尽型沟耗尽型S G DS G DSDGBSDGB第

36、37页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices如如在在 n 型型衬衬底底材材料料上上不不仅仅制制作作p 沟沟 MOS 管管，而而且且同同时时制制作作 n 沟沟 MOS 管管(n 沟沟 MOS 管管制制作作在在 p 阱阱内内 )，就就构构

37、成成 了了 所所 谓谓 的的CMOS（Compensatory MOS）。第38页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesCMOS 的结构示意的结构示意p 型型 Si(B)n nnp pGGSSDDUCCUinUoutGndn-MOSp-

38、MOS第39页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesCMOS 的符号图的符号图UCCUinUoutGnd第40页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect Tran

39、sistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesCMOS 工艺工艺CMOS Technology n 阱阱 CMOS 主要制造步骤主要制造步骤第41页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field

40、 Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices 1,1,注入和扩散注入和扩散 N 阱阱 p-SubstratephotoresistphotoresistSiO2n Well implant第42页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFund

41、amental of Semiconductor DevicesFundamental of Semiconductor Devices2 2，淀积薄二氧化硅和氮化硅淀积薄二氧化硅和氮化硅 定义场定义场氧化和栅区氧化和栅区 Si3N4SiO2p-Substraten Well第43页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor

42、DevicesFundamental of Semiconductor Devices3 3，n n 型型场场（沟沟道道终终止止）注注入入 增增加加厚厚氧氧化化 MOS 器器件件的的有有效效阈阈值值电电压压|UTH|(实际增强型实际增强型)Pad SiO2p-Substraten-WellSi3N4Si3N4Photo-resistPhoto-resistn field implant第44页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconduct

43、or Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices4 4，p 型场型场（沟道终止沟道终止）注入注入 增加增加厚氧化厚氧化 MOS 器件的有效阈值电压器件的有效阈值电压 p field implantPhoto-resistp-Substraten-WellSi3N4Si3N4第45页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal

44、 Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices5,5,生长场氧化层生长场氧化层 p-Substraten-WellSi3N4Si3N4FOX第46页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFun

45、damental of Semiconductor DevicesFundamental of Semiconductor Devices6 6，生长薄氧化层及淀积多晶硅生长薄氧化层及淀积多晶硅 p-Substraten-WellFOXPolysilicon第47页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFu

46、ndamental of Semiconductor Devices7 7，去除多晶硅并形成漏轻掺杂去除多晶硅并形成漏轻掺杂（LDD）间距间距 p-Substraten-WellFOXSiO2 SpacerPolysilicon第48页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Se

47、miconductor Devices8 8，N 沟沟 MOS 的漏、源注入和的漏、源注入和n 型材料型材料的接触区的接触区 Photo-resistn+S/D implantp-Substraten-WellFOX第49页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semicond

48、uctor Devices9 9，去除间距进行去除间距进行 N 沟沟 MOS 的轻掺杂的轻掺杂漏注入漏注入 n S/D LDD implantPhoto-resistp-Substraten-WellFOX第50页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor

49、 Devices10 10，P 沟沟 MOS 的漏、源注入的漏、源注入Photo-resistp-Substraten-WellFOXp S/D LDD implant第51页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices11 11，去除光刻胶

50、构成的去除光刻胶构成的 MOS器件器件PolysiliconSiO2p-Substraten-WellFOX第52页，本讲稿共189页Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices12 12，进行退火处理激活注入离子进行退火处理激活注入离子 n Diffusio