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1、Fundamentals of Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET)0506ENIAC:The First Electronic ComputerUniversity of Pennsylvania18,000 vacuum tubes Filled several large rooms Consumed enough power to light ten homes The actual glass tube was fragile and bulkyThe First Electronic Computer（1
2、946）The First Transistor（1947）Inventors:John Bardeen(left),Walter Brattain(right),and William Shockley(middle)at the Bell Labs They shared the Nobel Prize in Physics in 1956.Founded Shockley Semiconductor Laboratory in Silicon Valley(1956)William ShockleySenior Staff of Shockley Semiconductor Labora
3、tory toast their boss at a luncheon the day after the announcement of his Nobel Prize in 1956.The Traitorous Eight and Fairchild（1957）R.Noyce,G.Moore,J.Blank,E.Kliner,J.Hoerni,J.Last,S.Roberts,V.GrinichThe invention of integrated circuits（1959）Texas Instruments TI2000 Nobel PrizeJack KilbyThe invent
4、ion of integrated circuits（1959）FairchildRobert NoyceEstablishment of a new semiconductor company and the cradle of talent in Silicon Valley（1967-1968）J.Hoerni,S.Roberts and E.Kline：AmelcoLast：Signaix SemiconductorR.Noyce,G.Moore：IntelC.Sporck：NSCJ.Sanders：AMDMOSFET and MOS memory（Intel,1968）Andy Gr
5、oveGordon MooreRobert NoyceThe worlds first microprocessors birth（Intel，1971）Inventor：Ted Hoff,Federico Faggin4-bit general-purpose chip 40042300 transistors,ROM,RAM and I/O interface,size 3mm4mmDevelopment of transistors and their integrated circuitsIntegrated circuitTime period of the semiconducto
6、r industryThe number of each chipDiscrete compositionBefore 19601Small SI(SSI)Early 1960s2-5Middle SI(MSI)1960s to early 1970s50-5,000Large SI(LSI)Early 1970s to late 1970s5,000-100,000Very Large SI(VLSI)Late 1970s to late 1980s100,000-1,000,000Ultra Large SI(ULSI)1990 to present1,000,000SI:scale in
7、tegrationDevelopment of transistors and their integrated circuitsThe actual and projected industrial technology nodes of the criticle dimension(CD)from 1 m below are shown in Table.2020:3 nm!Development of transistors and their integrated circuitsReducing the feature size:More components on a silico
8、n wafer.Thechipperformancehasalsoimproved.The number of transistors on each microprocessor(million)Development of transistors and integrated circuitsPower consumption:Semiconductordevicesconsumeverylittlepower.With the miniaturization of devices,power consumption has decreased accordingly.Despite th
9、e rapid increase in the number oftransistors on each chip,the power consumptionof the chip is much lower at a faster rate.This has become a key performance parameterfor the growth of the portable electronic productmarket.AveragepowerMoores LawGordon Moore Co-founder of Intel Predictedthenumberoftran
10、sistors on a chip roughlydoubled every 18 months.NOT physical but empiricalruleandMooresLawissurprisingly accurate.Intel 45nm transistor Penryn processor In 2007 Intel released a new generation of 45nanometer Penryn processors In addition to improved power efficiency,Penrynprocessors are also less h
11、armful to the environment.Intel 45nm transistor Penryn processorIntel 45nm transistor Penryn processorIntel 45nm transistor Penryn processor Metal-oxide-semiconductor field-effect transistor(MOSFET).The combination of MOSFET and other circuit components can produce voltage gainand signal power gain.MOSFET is the heart of todays integrated circuit design.MOS refers to Metal-Oxide-Silicon(Si)system,the more general term is Metal-Insulator-Semiconductor(MIS),where the insulator is not necessarily silicon dioxide,and the semiconductor is not necessarily silicon.MOSFET：MOSFET