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1、半半导体封装制程与体封装制程与设备材料知材料知识介介绍FE半导体封装制程概述半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）封装后段（MARK-PLANT）测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半半 导导 体体 制制 程程Oxidization(氧化处理)Lithography(微影)Etching(蚀刻)Diffusion Ion Implantation(扩散离子植入)Deposition(沉积)Wafer Inspection(晶圆检查)Grind&Dici
2、ng(晶圓研磨及切割)Die Attach(上片)WireBonding(焊线)Molding(塑封)Package(包装)Wafer Cutting(晶圆切断)Wafer Reduce(晶圆减薄)Laser Cut&package saw(切割成型)Testing(测试)Laser mark(激光印字)IC制造开始制造开始前段結束前段結束后段封装开始后段封装开始製造完成製造完成封封 裝裝 型型 式式 (PACKAGE)(PACKAGE)Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic
3、2.54 mm(100miles)8 64DIPDual In-linePackagePlastic2.54 mm(100miles)1 direction lead325SIPSingle In-linePackage封封 裝裝 型型 式式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic2.54 mm(100miles)1 directionlead1624ZIPZigzagIn-linePackagePlastic1.778 mm(70miles)20 64S-DIPShrinkDual In
4、-linePackage封封 裝裝 型型 式式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)half-size pitch in the width direction2432SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54 mm(100miles)PBGAPin GridArray封封 裝裝 型型 式式 SurfaceMountShapeMaterialLead PitchNo of I/OTypi
5、cal FeaturesPlastic1.27 mm(50miles)2 direction lead8 40SOPSmallOutlinePackagePlastic1.0,0.8,0.65 mm4 direction lead88200QFPQuad-FlatPack封封 裝裝 型型 式式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27,0.762 mm(50,30miles)2,4 direction lead2080FPGFlatPackageof GlassCeramic1.27,1.01
6、6,0.762 mm(50,40,30 miles)2040LCCLeadlessChipCarrier封封 裝裝 型型 式式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27 mm(50miles)j-shape bend4 direction lead18124PLCCPlastic LeadedChip CarrierCeramic0.5 mm32200VSQFVerySmallQuadFlatpackAssembly Assembly Main Main ProcessProcessDie C
7、ure(Optional)Die BondDie SawPlasmaCard AsyMemory TestCleanerCard TestPacking for OutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUV Cure(Optional)Laser markPost Mold CureMoldingLaser CutPackage SawWire Bond SMT(Optional)半导体设备供应商介绍半导体设备供应商介绍-前道部分前道部分前道部分前道部分半导体设备供应商介绍半导体设备供应商介绍-
8、前道部分前道部分前道部分前道部分常用术语介绍常用术语介绍1.SOP-Standard Operation Procedure 标准操作手册标准操作手册2.WI Working Instruction 作业指导书作业指导书3.PM Preventive Maintenance 预防性维护预防性维护4.FMEA-Failure Mode Effect Analysis 失效模式影响分析失效模式影响分析5.SPC-Statistical Process Control 统计制程控制统计制程控制6.DOE-Design Of Experiment 工程试验设计工程试验设计7.IQC/OQC-Incom
9、ing/Outing Quality Control 来料来料/出货质量检验出货质量检验8.MTBA/MTBF-Mean Time between assist/Failure 平均无故障工作时间平均无故障工作时间9.CPK-品质参数品质参数10.UPH-Units Per Hour 每小时产出每小时产出11.QC 7 Tools(Quality Control 品品管管七工具七工具)12.OCAP(Out of Control Action Plan 异常改善计划异常改善计划)13.8D(问题解决八大步骤问题解决八大步骤)14.ECN Engineering Change Notice(制程
10、变更通知制程变更通知 )15.ISO9001，14001 质量管理体系质量管理体系前道后道EOLWire Bond引线键合Mold模塑Laser Mark激光印字Laser Cutting激光切割EVI产品目检 SanDisk Assembly Process Flow SanDisk 封装工艺流程封装工艺流程 Die Prepare芯片预处理ie Attach芯片粘贴Wafer IQC来料检验Plasma Clean清洗Plasma Clean清洗Saw Singulation切割成型 SMT表面贴装PMC模塑后烘烤SMT（表面贴装）-包括锡膏印刷(Solder paste printing
11、),置件(Chip shooting),回流焊(Reflow),DI水清洗(DI water cleaning),自动光学检查(Automatic optical inspection),使贴片零件牢固焊接在substrate上StencilSubstrateSolder paste pringtingChip shootingReflowOvenDI water cleaningAutomatic optical inpectionCapacitorDI waterCameraHot windNozzlePADPADSolder pasteDie Prepare(芯片预处理)To Grind
12、 the wafer to target thickness then separate to single chip-包括来片目检(Wafer Incoming),贴膜(Wafer Tape),磨片(Back Grind),剥膜(Detape),贴片(Wafer Mount),切割(Wafer Saw)等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检(DVI)检测出所有由于芯片生产,分类或处理不当造成的废品.Wafer tapeBack GrindWafer DetapeWafer Saw Inline Grinding&Polish -Accretech PG300RM
13、TransferCoarse Grind 90%FineGrind10%Centrifugal CleanAlignment&CenteringTransferBack Side UpwardDe-tapingMountKey TechnologyKey Technology:1.Low Thickness Variation:+/_ 1.5 Micron1.Low Thickness Variation:+/_ 1.5 Micron2.Good Roughness:+/-0.2 Micron2.Good Roughness:+/-0.2 Micron3.Thin Wafer Capacity
14、:Up to 50 Micron3.Thin Wafer Capacity:Up to 50 Micron4.All-In-One solution,Zero Handle Risk4.All-In-One solution,Zero Handle Risk2.Grinding 相关材料A TAPE麦拉B Grinding 砂轮C WAFER CASSETTLE工艺对工艺对TAPE麦拉的要求：麦拉的要求：1。MOUNTlNo delamination STRONG2。SAW ADHESIONlNo die flying offlNo die crack工艺对麦拉的要求：工艺对麦拉的要求：3。E
15、XPANDINGTAPE lDie distanceELONGATION lUniformity 4。PICKING UPWEAKADHESIONlNo contamination3.Grinding 辅助设备A Wafer Thickness Measurement 厚度测量仪 一般有接触式和非接触式光学测量仪两种；B Wafer roughness Measurement 粗糙度测量仪 主要为光学反射式粗糙度测量方式；4.Grinding 配套设备A Taping 贴膜机B Detaping 揭膜机C Wafer Mounter 贴膜机 Wafer Taping -Nitto DR300I
16、ICutTapeTapingAlignmentTransfer Transfer BackKey TechnologyKey Technology:1.High Transfer Accuracy:+/_ 2 Micron1.High Transfer Accuracy:+/_ 2 Micron2.High Cut Accuracy:+/-0.2 mm2.High Cut Accuracy:+/-0.2 mm3.High Throughput:50 pcs wafer/Hour3.High Throughput:50 pcs wafer/Hour4.Zero Void and Zero Waf
17、er Broken 4.Zero Void and Zero Wafer Broken DetapingDetapinglWafermountWafer frame晶晶 圓圓 切切 割割(Dicing)Dicing)Dicing 设备:A DISCO 6361 系列B ACCERTECH 东京精密AW-300TMain Sections IntroductionlCutting Area:Spindles(Blade,Flange,Carbon Brush),Cutting Table,Axes(X,Y1,Y2,Z1,Z2,Theta),OPClLoader Units:Spinner,Ele
18、vator,Cassette,Rotation ArmBlade Close-ViewBladeCutting WaterNozzleCooling Water NozzleDie Sawing Disco 6361 Key TechnologyKey Technology:1.Twin-Spindle Structure.2.X-axis speed:up to 600 mm/s.3.Spindle Rotary Speed:Up to 45000 RPM.4.Cutting Speed:Up to 80mm/s.5.Z-axis repeatability:1um.6.Positionin
19、g Accuracy:3um.RearFrontA Few ConceptslBBD(Blade Broken Detector)lCutter-set:Contact and OpticallPrecision InspectionlUp-Cut and Down-CutlCut-in and Cut-remain晶晶 圓圓 切切 割割(Dicing)Dicing)Dicing 相关工艺A Die Chipping 芯片崩角B Die Corrosive 芯片腐蚀C Die Flying 芯片飞片Wmax,Wmin,Lmax,DDY,DY規格 DY0.008mmWmax0.070mmWmin
20、0.8*刀厚Lmax1000,4 90/1004,8,11 9011,15uIC type loop typeCapillary Gold Wireu Gold Wire Manufacturer (Nippon,SUMTOMO,TANAKA.)u Gold Wire Data (Wire Diameter,Type,EL,TS)焊线焊线(Wire Bond)(Wire Bond)3.Wire Bond 辅助设备A Microscope 用于测loop heightB Wire Pull 拉力计（DAGE4000）C Ball Shear 球剪切力计D Plasma 微波/等离子清洗计Ball
21、 SizeBall Thicknessu 單位單位:um，Milu 量測倍率量測倍率:50Xu Ball Thickness 計算公式u 60 um BPP 1/2 WD=50%u 60 um BPP 1/2 WD=40%50%Ball SizeBall Size&Ball ThicknessLoop Heightu 單位單位:um，Milu 量測倍率量測倍率:20XLoop Height 線長線長Wire Pullu 1 Lifted Bond(Rejected)u 2 Break at neck(Refer wire-pull spec)u 3 Break at wire(Refer wi
22、re-pull spec)u 4 Break at stitch(Refer stitch-pull spec)u 5 Lifted weld(Rejected)Ball Shearu 單位單位:gram or g/milu Ball Shear 計算公式計算公式u Intermetallic（IMC有有75%的的共共晶晶,Shear Strength標標準準為為6.0g/mil。uSHEAR STRENGTHBall Shear/Area (g/mil)Ball Shear=x;Ball Size=y;Area=(y/2)x/(y/2)=z g/mil等离子工艺等离子工艺Plasma Pro
23、cessl气相-固相表面相互作用 Gas Phase-Solid Phase InteractionPhysical and Chemicall分子级污染物去除Molecular Level Removal of Contaminants30 to 300 Angstromsl可去除污染物包括 Contaminants Removedl难去除污染物包括 Difficult Contaminants Finger PrintsFluxGross ContaminantsOxidesEpoxySolder MaskOrganic ResiduePhotoresistMetal Salts(Nick
24、el Hydroxide)Plasma Clean March AP1000 Key TechnologyKey Technology:1.Argon Condition,No oxidation.2.Vacuum Pump dust collector.3.Clean Level:blob Test Angle 8 Degree.PlasmaPCB SubstrateDie+Electrode+ArWell Cleaned with Plasma 80 o 8 o Organic Contamination vs Contact AngleWater DropChipChipMold(模塑)
25、To mold strip with plastic compound then protect the chip to prevent from damaged-塑封元件的线路，以保护元件免受外力损坏，同时加强元件的物理特性,便于使用.在模塑前要经过等离子清洗(Pre-Mold Plasma Clean),以确保模塑质量.在模塑后要经过模塑后固化(Post Mold Cure),以固化模塑料.塑封塑封 (Molding)(Molding)1.Molding设备A TOWA YPS&Y-SeriesB ASA OMEGA 3.8机器上指示灯的说明：机器上指示灯的说明：1、绿灯机器处于正常工作状
26、态；2、黄灯机器在自动运行过程中出现了报警提示，但机器不会立即停机；3、红灯机器在自动运行过程中出现了故障，会立即停机，需要马上处理。机器结构了解机器结构了解正面正面指示灯主机Tablet压机人机界面紧急停机按钮紧急停机按钮机器结构了解机器结构了解背面背面CULLBOX用来装切下来的料饼；OUTMG用来装封装好的L/F；配电柜用来安装整个模机的电源和PLC，以及伺服电机的SERVOPACK。CULLBOXOUTMG配电柜紧急停机按钮紧急停机按钮塑封塑封 (Molding)(Molding)2.Molding相关材料A Compound 塑封胶B Mold Chase 塑封模具模具介绍：模具介绍：型腔注塑孔胶道模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。塑封塑封 (Molding)(Molding)3.Molding辅助设备A X-RAY X 射线照射机 -用于Mold 后对于产品的检查B Plasma 清洗机 -作用原理和WB 前的相同；Thanks for watching and listening汇报结束谢谢大家!请各位批评指正