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1、 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSemiconductor Semiconductor Manufacturing TechnologyManufacturing TechnologyMichael Quirk&Julian Serda Michael Quirk&Julian Serda October 2001 by Prentice HallOctober 2001 by Prentice HallChapter 7Chapter 7
2、Metrology and Defect Metrology and Defect InspectionInspection 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaObjectivesAfter studying the material in this chapter,you will be able to:1.Explain why IC metrology is performed,and discuss the different categ
3、ories of wafer measurement equipment and data collection methods used.2.State twelve different quality measures and identify the fabrication processes where each is used.3.Discuss the various metrology methods and equipment associated with the different quality measures.4.List and discuss the purpos
4、e of seven different types of analytical equipment used to support IC fabrication.2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaIC MetrologyMeasurement EquipmentYieldData Management 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Qu
5、irk and Julian SerdaUnpatterned Surface Inspection SystemPhotograph courtesy of KLA-TencorPhoto 7.1 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaMonitor Wafer Versus Patterned WaferPatterned waferMonitor waferFigure 7.1 2001 by Prentice HallSemiconducto
6、r Manufacturing Technologyby Michael Quirk and Julian SerdaMeasurement Tool ClassificationTable 7.1 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaQuality Measures in Wafer FabricationTable 7.2 2001 by Prentice HallSemiconductor Manufacturing Technologyby
7、 Michael Quirk and Julian SerdaFilm ThicknessResistivity and Sheet ResistanceFour-Point ProbeSheet Resistance(Opaque Films)Van der PauwContour MapsEllipsometry(Transparent Films)Reflection SpectroscopyX-ray Film ThicknessPhotoacoustic Technology 2001 by Prentice HallSemiconductor Manufacturing Techn
8、ologyby Michael Quirk and Julian SerdaIllustration of Square Thin FilmFigure 7.2 ltwCross-sectional area =w tR=r(l)a(ohms)2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaFour Point ProbeFigure 7.3 WaferRVoltmeterConstant current sourceVIrs=VIx 2ps(ohms-cm)
9、2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaVan der Pauw Sheet ResistivityI(a)(c)(d)ContactConductive materialV(b)Figure 7.4 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSheet Resistance Contour MapNominal
10、 valueFigure 7.5 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaBasic Principle of EllipsometryFigure 7.6 LaserFilterPolarizerQuarter wave plateFilm being measuredAnalyzerDetector 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk
11、 and Julian SerdaLight Reflection from a Thin LayerAirOxideSilicontFigure 7.7 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaFilm Thickness Measured with X-Ray Fluorescence(XRF)TRXRF methodNormal XRF methodDetectorDetectorX-ray flourescenceX-ray flouresce
12、nceScattered X-rayScattered X-rayIrradiated X-rayIrradiated X-rayFigure 7.8 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaPhotoacoustic Film Thickness MeasurementDetection laser beamHigh outputEcho 2Echo 1Change in surface reflectivity(d)Echo 1Detection
13、laser beamNominal output(c)Detection laser beamNominal output(b)HeatSound waveOptical detectorPump laser beamLow output(a)Used with permission from Solid State Technology,June 1997,p.86Figure 7.9 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaDetailed Str
14、ess Map of WaferFigure 7.10 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaIndex of RefractionIndex of Refraction,n=sin i/sin r Examples of n:air=1.00SiO2=1.46diamond=2.12Air(n 1.0)SiO2(n 1.46)Fast mediumSlow medium Air(n 1.0)Glass(n 1.5)Fast mediumSlow m
15、edium Figure 7.11 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaPN Junctions(Dopant Concentration)Figure 7.12-pn junctionsn n+n n+p p-n n+n n+p p-p p-2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaThermal Wave
16、 System for Measuring Dopant ConcentrationProbe laser(HeNe)Pump laser(Argon)Thermal wave signal detectorX-Y stageWaferTwo-way mirrorTwo-way mirrorFigure 7.13 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSpreading Resistance Probe(SRP)Figure 7.14 RspESr
17、rProbesDirection of measurementsBeveled surfacetFlat surfaceFlat surfaceSubstrateSubstrateRsp=r4r(ohms)2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSurface DefectsUnpatterned Surface DefectsOptical MicroscopyOptical SystemLight Scattering Defect Detecti
18、onParticles Per Wafer Per PassPatterned Surface DefectsLight Scattering on Patterned Wafers 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaDarkfield and Brightfield DetectionBrightfield imagingTwo-way mirror Light sourceLensViewing opticsViewing opticsDar
19、kfield imagingLight sourceLensLight reflected by surface irregularitiesFigure 7.15 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaWafer Inspection SystemPhotograph courtesy of Inspex Corp.Photo 7.2 2001 by Prentice HallSemiconductor Manufacturing Technolo
20、gyby Michael Quirk and Julian SerdaSchematic of Optical SystemPhase and intensity detectionData generation,processing,display are networked with factory management softwareLensLight sourceVideo cameraCRTPhoto detector arrayObjective lens assemblyViewing opticsSplit mirrorVibration isolation padWafer
21、 positioning stageThree-axis piezo substageFigure 7.16 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaDetectorPinholeWafer is driven up and down along Z-axisLaserPinholeBeam splitterObjective lensCenter of focus+Z-Z0Principle of Confocal MicroscopyFigure
22、7.17 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaParticle Detection by Light ScatteringIncident lightBeam scanningPhoto detectorParticleWafer motionScattered lightReflected lightDetection of scattered lightFigure 7.18 2001 by Prentice HallSemiconductor
23、 Manufacturing Technologyby Michael Quirk and Julian SerdaParticle MapFigure 7.19 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaOther Essential Metrology ToolsCritical Dimension(CD)Scanning Electron Microscope(SEM)CD SEMStep CoverageOverlay RegistrationC
24、apacitance-Voltage(C-V)TestContact Angle 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSimple Schematic of CD-SEMX-scan signalSpecimenScanning magnetsStageDetectorY-scan signalX-scanY-scanZ-axis signalCRTCondenser lensAnodeElectron extractorFilament(elec
25、tron emitter)Electron beamFigure 7.20 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaCD SEMPhotograph courtesy of KLA-TencorPhoto 7.3 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaStep CoverageConformal step c
26、overageNonconformal step coverage(voids)Figure 7.21 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSurface ProfilerCRTProximity sensorStylus motionStylusX-Y StageDirection of scan Wafer surfaceLinear drive unitControl electronicsAmp+5V-5V+24 VDIFigure 7.2
27、2 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaOverlay Registration Inspection PatternsIdeal overlay registratonX1=X2,Y1=Y2MisregistratonX1 X2,Y1 Y2X1X2Y1Y2X1X2Y1Y2Figure 7.23 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk a
28、nd Julian SerdaMOS Model of Two Capacitors at Gate RegionConductorsOxideSiliconGateSubstrateSource-DrainGroundDielectricSourceGateDrainP+P+P-type silicon substratePolysilicon(doped)Silicon(doped)P+Silicon dioxideFigure 7.24 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk
29、and Julian SerdaC-V Test Setup and PlottingOxideCapacitance meterPower supplyMeasures capacitance for each value of bias voltage.Set range from-5V to+5V in 1-volt incrementsN-type siliconMetalMetal Figure 7.25 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian Ser
30、daCapacitance Versus Voltage for n-Type Silicon(First Step of C-V Test)-2-3-5-4-10+1+2+3+4+5CmaxBias voltage0CapacitanceC-V plot for n-type siliconCmaxFigure 7.26 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaIonic Charge Collection in C-V TestN-type sil
31、iconMetalAl+Temperature range approximately 200-300 CPower supplyOxideFigure 7.27 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaVoltage Shift in n-Type Silicon0-2-3-5-4-10+1+2+3+4+5CmaxBias voltageCapacitanceC-V plot for n-type siliconCminDVFigure 7.28 2
32、001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaContact AngleContact angleDropletSubstrateFigure 7.29 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaAnalytical EquipmentSecondary ion mass spectrometry(SIMS)Atomic
33、 force microscope(AFM)Auger electron spectroscope(AES)X-ray photoelectron spectroscopy(XPS)Transmission electron microscope(TEM)Wavelength and energy dispersive spectrometer(WDX and EDX)Focused ion beam(FIB)2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaR
34、elative Importance of Analytical EquipmentFigure 7.30 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaIon Beam Sputtering of Surface Material(Secondary-ion Mass Spectroscopy,SIMS)Ion beamSputtered atoms and moleculesFigure 7.31 2001 by Prentice HallSemicon
35、ductor Manufacturing Technologyby Michael Quirk and Julian SerdaIon Production in a Duoplasmatron+Gas inlet(ex:argon)Filament terminalElectromagnetTungsten filamentAnode electrodeExtraction electrodeIon beam(Ar+)Vacuum chamberIon source assemblyFigure 7.32 2001 by Prentice HallSemiconductor Manufact
36、uring Technologyby Michael Quirk and Julian SerdaTOF-SIMS Mass Spectrometer PrincipleVtofPath length,LDetectorGridSamplevmqFigure 7.33 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSchematic of Atomic Force MicroscopeFigure 7.34 Deflection sensorCantilev
37、er deflectionCantileverLaserSurface atomsPiezoelectric drive unitXYZ 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaAuger Electron Spectroscopy(AES)AES measures the energy of auger electrons emitted by the surface of a sample when struck by a highly-focus
38、ed narrow electron beam.It is very sensitive to the surface,with a depth of only 10 to 50.The energy associated with auger electrons provide a distinct link back to the parent atom that is used for identification of the sample elements.2001 by Prentice HallSemiconductor Manufacturing Technologyby Mi
39、chael Quirk and Julian SerdaSchematic of X-Ray Photoelectron Spectroscopy(XPS)MeasurementX-ray sourceSampleFigure 7.35 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSchematic of Transmission Electron Microscope(TEM)Energy-loss spectrometerApertureSample
40、stageDetectorCCD video cameraFluorescent screenCRTCondenser lensAnodeLensesElectron gunX-ray detectorObjective apertureDisplayed sample imageLiquid N2 DewarFigure 7.36 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaSample TEM Applications in Semiconductor
41、 ManufacturingTable 7.3 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaEnergy Dispersive Spectrometer(EDX)Thin beryllium windowPhoto electron pathSiSiKaSi(Li)crystalH.V.biasTo amplifierX-rayElectron-hole pairsSi(Li)detectorAmplifierWindowEnergySiPFigure 7
42、.37 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaFocused Ion Beam(FIB)MillingFIB beamSample epoxied to gridGridSample milled by FIB beamTEM beamFigure 7.38 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian SerdaChapter 7 ReviewSummary 177Key Terms178Review Questions178Equipment Suppliers Web Sites179References180