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1、291011 表征方法 1. 霍尔效应测试 2. X射线衍射方法（XRD） 3. 光致发光谱（PL） 4. X射线光电子能谱（XPS） 5.其他测试方法：扫描电子显微镜（SEM）、采用PMT 920光电倍增 、 DF4810型晶体管特性图示仪、KEITHLEY 4200 I-V测试系统 12 课程总结n半导体材料与工艺课程内容共分为五部分13半导体材料及器件工艺技术（一）n1发光器件材料及工艺技术n2光伏器件材料及工艺技术14l nj28半导体材料及器件工艺技术（四）1 喷雾热解成膜技术喷雾热解成膜技术n2 CVD成膜技术成膜技术n低压低压CVD、常压、常压CVD、离子增强型离子增强型CVD、
2、MOCVDn3 扩散及阳极氧化技术扩散及阳极氧化技术29CVD薄膜生长30CVDCVD化学反应Pyrolysis irreversibleHydride reaction, SiH4(g) Si(s) 2H2(g)Metal-organic reaction MOCVD(CH3)3Ga(g) AsH3(g) GaAs(s) 3CH4(g)Advantages: low growth temperaturecold wall reactorDisadvantage: chemical purity and cost31CVDCVD化学反应Disproportionation irreversib
3、leAsCl3(g) 3Ga(s) 3GaCl(g) 1/4 As4(g)3GaCl(g) 1/2 As4(g) 2GaAs(s) GaCl3(g)Disadvantages: multizone furnacelow gas flowlow reaction efficiency (66%)system contamination (hot wall)32Plasma-Enhanced CVD33半导体材料及器件工艺技术（五）n1 刻蚀技术刻蚀技术n化学刻蚀、化学刻蚀、离子刻蚀、反应离子刻蚀离子刻蚀、反应离子刻蚀n2 半导体材料及器件的测试半导体材料及器件的测试34RF-powered pl
4、asma etch systemRF-powered plasma etch system35MaskMaskFilmFilm+ + +Ionic speciesIonic species+ + + + + + +Physical Etching Not very selective since all materials sputter at about the same rate. Physical sputtering can cause damage to surface, with extent and amount of damage a direct function of io
5、n energy (not ion density).Ion Enhanced Etching The chemical and physical components of plasma etching do not always act independently - both in terms of net etch rate and in resulting etch profile. Figure shows etch rate of silicon as XeF2 gas (not plasma) and Ar+ ions are introduced to the silicon
6、 surface. Only when both are present does appreciable etching occur. Etch profiles can be very anisotopic, and selectivity can be good. No plasmasputteringSILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin 2000 by Prentice HallUpper Saddle River NJ36Etchants and etc
7、h productsSolidEtch gasEtch productSi, SiO2, Si3N4PSG, and BPSGCF4, SF6, and NF3SiF4SiCl2 and CCl2F2SiCl2 and SiCl4AlBCl3, CCl4, Cl2Al2Cl6 and AlCl3Organic solidsPhotoresists, etc.O2O2 + CF4CO, CO2, H2OCO, CO2, HFRefractory metals(W, Ta, Ti, Mo, etc.)CF4WF6 .GaAs, InPCl2 and CCl2F2GaCl3, AsCl5, .37P
8、lasma assisted etchingnPlasma assisted etching sequenceTake a molecular gas nCF4Establish a glow dischargenCF4+e CF3 + F + e Radicals react with solid films to form volatile productnSi + 4F SiF4 Pump away volatile product (SiF4 ) 38（六）代表性的几种半导体材料特性 及表征技术nElemental semiconductor-Si, GenCompound semiconductorIV-IV-Si SiCIII-V-GaAs,GaSb,InP,InAs,II-VI -ZnO,ZnS,ZnSenAlloysBinary-Si1-xGexTenary-AlGaAs,AlInAs,Quaternary-AlGaAsSb39 表征方法 1. 霍尔效应测试 2. X射线衍射方法（XRD） 3. 光致发光谱（PL） 4. X射线光电子能谱（XPS） 5.其他测试方法：扫描电子显微镜（SEM）、采用PMT 920光电倍增 、 DF4810型晶体管特性图示仪、KEITHLEY 4200 I-V测试系统 40 结束语结束语