Silvaco-TCAD-器件仿真2.ppt

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1、2022-7-2Silvaco学习2上一讲知识回顾和本讲内容上一讲内容：器件仿真的整体思路器件结构，材料特性，物理模型，计算方法，特性获取和分析这一讲安排器件结构生成（2D/3D）ATLAS语法描述结构DevEdit编辑结构2022-7-2Silvaco学习3器件仿真流程2022-7-2Silvaco学习4ATLAS描述器件结构ATLAS描述器件结构的步骤meshregionelectrodedoping2022-7-2Silvaco学习5mesh网格定义，状态有mesh,x.mesh,y.mesh,eliminate等Mesh对网格进行控制x.mesh和y.mesh定义网格位置及其间隔(li

2、ne)mesh space.mult=1.5mesh infile=nmos.strx.mesh loc=0.1 spac=0.052022-7-2Silvaco学习6meshEliminate可以在ATLAS生成的mesh基础上消除掉一些网格线，消除方式为隔一条删一条参数columns,rows, ix.low,ix.high,iy.low.ly.high,x.min,x.max,y.min,y.maxEliminate columns x.min=0.2 x.max=1.4 y.min=0.2 y.max=0.7Eliminate 前Eliminate 后2022-7-2Silvaco学习

3、7regionRegion将mesh中不同位置以区域组织起来语法：Region number= region num=1 y.max=0.5 siliconregion num=2 y.min=0.5 y.max=1.0 x.min=0 x.max=1.0 oxideregion num=3 y.min=1.0 y.max=2.0 x.min=0 x.max=1.0 GaAs例句：2022-7-2Silvaco学习8electrodeElectrode定义电极语法：electrode name= num= substrate elec name=emitter x.min=1.75 x.max

4、=2.0 y.min=-0.05 y.max=0.05elec name=gate x.min=0.25 lenght=0.5elec num=1 name=source y.min=0 left length=0.25elec num=2 name=drain y.min=0 right length=0.25elec name=anode topelec name=cathode bottom例句2022-7-2Silvaco学习9dopingDoping定义掺杂分布doping 分布：uniform,gaussian,erfc，具体设置还可分为三组1，Concentration and

5、junction2，Dose and characteristic3，Concentration and characteristic杂质类型：n.type,p.type位置：region,x.min,x.max,y.min,y.max,peak,junction2022-7-2Silvaco学习10Doping例句doping uniform conc=1e16 n.type region=1doping region=1 gaussian conc=1e18 peak=0.1 characteristic=0.05 p.type x.left=0.0 x.right=1.0doping r

6、egion=1 gauss conc=1e18 peak=0.2 junct=0.15doping x.min=0.0 x.max=1.0 y.min=0.0 y.max=1.0 n.type ascii infile=concdata均匀掺杂高斯分布从文件导入杂质分布2022-7-2Silvaco学习11ATLAS描述的二极管结构go atlasmeshx.mesh loc=0.00 spac=0.05x.mesh loc=0.10 spac=0.05y.mesh loc=0.00 spac=0.20y.mesh loc=1.00 spac=0.01y.mesh loc=2.00 spac=

7、0.20region number=1 x.min=0.0 x.max=0.1 y.min=0.0 y.max=1.0 material=siliconregion number=2 x.min=0.0 x.max=0.1 y.min=1.0 y.max=2.0 material=siliconelectrode name=anode topelectrode name=cathode bottomdoping uniform conc=1e18 n.type region=1doping uniform conc=1e18 p.type region=2save outfile=diode_

8、0.strtonyplot diode_0.str2022-7-2Silvaco学习12DevEdit编辑器件结构Work areaDefining regionMesh creationSave the file2022-7-2Silvaco学习13Defining region添加、替换或删除区域主要参数：区域ID(region=)、材料(material=)、区域坐标(points=“0,0 0,1 ”)Region reg=1 mat=silicon color=0 xffb2 pattern=0 x9 points=“0,0 0.1,0 0.1,1 0,1 0,0”Region re

9、g=3 name=anode material=contact elec.id=1 work.func=0 points=“0,0 0.1,0 0.1,1 0,1 0,0”例句2022-7-2Silvaco学习14Defining impurity定义某区域的掺杂主要参数序号：Id, region.id掺杂：impurity, resistivity,杂质分布：peak.value, reference.value, combination.function, concentration.function.y|x|z, x1, x2, y1, y2, rolloff.y, coc.func.y

10、2022-7-2Silvaco学习15impurityPeak.value为杂质浓度reference.value为一定距离后的杂质浓度“Gaussian”, “Gaussian (Dist)” , “Error Function”,“Error Function (Dist)” , “Linear (Dist)” , “Logarithmic” log ,“Logarithmic (Dist)” , “Exponential, “Exponential (Dist)” , “Step Function”分布类型有：Rolloff.y|x|z为浓度变化的方向2022-7-2Silvaco学习1

11、6Impurity例子impurity id=1 region.id=1 imp=Donors x1=0 x2=0.1 y1=0 y2=1 peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constantimpurity id=2 region.id=4 imp=Composition Fraction X x1=0 x2=0 y1=0 y2=0 peak.value=0.47 comb.func=

12、Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constant2022-7-2Silvaco学习17Defining meshBase.mesh，网格整体控制 参数有height,width，矩形的最大高度和宽度Bound.conditioning，减少边界的网格点Constr.mesh，对网格中三角形做限制主要参数：X1, x2, y1, y2, max|min.height|ratio|width2022-7-2Silvaco学习18Mesh例句base.mesh height=0.1 wid

13、th=0.125#bound.cond max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic#constr.mesh mat.type=semiconductor max.angle=180 max.ratio=200 max.height=1 max.width=1 min.height=0.001 min.width=0.001#constr.mesh x1=0 x2=0.1 y1=0.0 y2=1 max.height=0.08 min.width=0.01co

14、nstr.mesh x1= 0.01 x2=0.11 y1=1 y2=2 max.height=0.1 min.width=0.01mesh2022-7-2Silvaco学习19Devedit编辑二极管结构的例子go devedit#region reg=1 mat=silicon color=0 xffb2 pattern=0 x9 points=“0,0 0.1,0 0.1,1 0,1 0,0”impurity id=1 region.id=1 imp=Donors x1=0 x2=0.1 y1=0 y2=1 peak.value=1e+18 ref.value=1000000000000

15、 comb.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constantregion reg=2 mat=silicon color=0 xffb2 pattern=0 x9 points=“ 0.01,1 0.11,1 0.11,2 0.01,2 0.01,1” impurity id=1 region.id=2 imp=acceptors x1= 0.01 x2=0.11 y1=1 y2=2 peak.value=1e+18 ref.value=1000000000000 comb

16、.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constant2022-7-2Silvaco学习20Devedit编辑二极管结构的例子#electroderegion reg=3 name=anode mat=contact elec.id=1 work.func=0 points=“0,0 0.1,0 0.1, 0.01 0, 0.01 0,0”region reg=4 name=cathode mat=contact elec.id=2 work.func=0 points=“ 0

17、.01,2 0.11,2 0.11,2.01 0.01,2.01 0.01,2”# Set Meshing Parametersbase.mesh height=0.1 width=0.125#bound.cond max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic#constr.mesh mat.type=semiconductor max.angle=180 max.ratio=200 max.height=1 max.width=1 min.height=0.

18、001 min.width=0.001#constr.mesh x1=0 x2=0.1 y1=0.0 y2=1 max.height=0.08 min.width=0.01constr.mesh x1= 0.01 x2=0.11 y1=1 y2=2 max.height=0.1 min.width=0.01meshstructure outf=diode_1.strtonyplot diode_1.str2022-7-2Silvaco学习21两种结构生成的方式的对比ATLAS描述的语法较简单，结构也简单DevEdit的灵活性要强，相对复杂，可对已有的结构在重新定义网格或是扩展成三维结构Atla

19、s描述的结构Devedit编辑的结构2022-7-2Silvaco学习22三维结构生成得到三维结构只需在二维结构生成的语法基础上添加Z轴的坐标如z.mesh=., z.min= ,z.max= 2022-7-2Silvaco学习23ATLAS描述三维二极管结构go atlasmesh three.dx.mesh loc=0.00 spac=0.05x.mesh loc=0.1 spac=0.05y.mesh loc=0.00 spac=0.20y.mesh loc=1.00 spac=0.01y.mesh loc=2.00 spac=0.20z.mesh loc=0.00 spac=0.02z

20、.mesh loc=1.00 spac=0.02region number=1 material=silicon x.min=0.0 x.max=1 y.min=0.0 y.max=1.0 z.min=0 z.max=1 region number=2 material=silicon x.min=0.0 x.max=1 y.min=1.0 y.max=2.0 z.min=0 z.max=1 electrode name=anode x.min=0 x.max=0.1 y.min=-0.01 y.max=0 z.min=0 z.max=1electrode name=cathode x.min

21、=0 x.max=0.1 y.min=2 y.max=2.01 z.min=0 z.max=1doping uniform conc=1e18 n.type region=1doping uniform conc=1e18 p.type region=2save outfile=diode_3d.str2022-7-2Silvaco学习24DevEdit 3D的例子Diodeex08.inMos2ex04.in2022-7-2Silvaco学习25下一讲安排材料特性设置物理模型设置特性获取结果分析2022-7-2Silvaco学习26 谢谢！2022-7-2Silvaco学习27 交流时间结束结束