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1、二极管刻蚀程序2二极管刻蚀程序代码 go athena line x loc=0 spac=0.1 line x loc=10 spac=0.1 line y loc=0 spac=0.01 line y loc=1 spac=0.05 line y loc=2 spac=0.1 init silicon c.boron=1.0e10 orientation=100 two.d space.mult=2O_IDE INITIAL=0.01diffuse time=30temperature=1000 dryo2 press=1 RATE.DEPO MACHINE=PECVD NITRIDE D
2、EP.RATE=1500 A.M CVD STEP.COV=.75 deposit nitride THICK=0.5 RATE.ETCH MACHINE=WETETCH O_IDE WET.ETCH ISOTROPIC=.5 U.M RATE.ETCH MACHINE=WETETCH NITRIDE WET.ETCH ISOTROPIC=.1 U.M ETCH NITRIDE LEFT P1._=5 ETCH O_IDE LEFT P1._=5 DEPOSIT O_IDE THICK=0.5 DIV=6 C.PHOSPHORUS=1e20 DIFFUSE TIME=30 TEMPERATUR
3、E=1000 NITROGEN PRESS=1 ETCH O_IDE ALL ETCH NITRIDE ALL tonyplot quit go athena line x loc=0 spac=0.1 line x loc=10 spac=0.1 line y loc=0 spac=0.01 line y loc=1 spac=0.05 line y loc=2 spac=0.1 init silicon c.boron=1.0e15 orientation=100 two.d space.mult=2O_IDE INITIAL=0.01diffuse time=30temperature=
4、1000 dryo2 press=1 RATE.DEPO MACHINE=PECVD NITRIDE DEP.RATE=1500 A.M CVD STEP.COV=.75 deposit nitride THICK=0.5 RATE.ETCH MACHINE=WETETCH O_IDE WET.ETCH ISOTROPIC=.5 U.M RATE.ETCH MACHINE=WETETCH NITRIDE WET.ETCH ISOTROPIC=.1 U.M ETCH NITRIDE LEFT P1._=5 ETCH O_IDE LEFT P1._=5 DEPOSIT O_IDE THICK=0.
5、5 DIV=6 C.PHOSPHORUS=1e20 DIFFUSE TIME=30 TEMPERATURE=1000 NITROGEN PRESS=1 ETCH O_IDE ALL ETCH NITRIDE ALL tonyplot quit go athena line x loc=0 spac=0.1 line x loc=10 spac=0.1 line y loc=0 spac=0.01 line y loc=1 spac=0.05 line y loc=2 spac=0.1 init silicon c.boron=1.0e15 orientation=100 two.d space
6、.mult=2O_IDE INITIAL=0.01diffuse time=40 temperature=1500 dryo2 press=2 RATE.DEPO MACHINE=PECVD NITRIDE DEP.RATE=1500 A.M CVD STEP.COV=.75 deposit nitride THICK=0.5 RATE.ETCH MACHINE=WETETCH O_IDE WET.ETCH ISOTROPIC=.5 U.M RATE.ETCH MACHINE=WETETCH NITRIDE WET.ETCH ISOTROPIC=.1 U.M ETCH NITRIDE LEFT P1._=5 ETCH O_IDE LEFT P1._=5 DEPOSIT O_IDE THICK=0.5 DIV=6 C.PHOSPHORUS=1e20 DIFFUSE TIME=30 TEMPERATURE=1000 NITROGEN PRESS=1 ETCH O_IDE ALL ETCH NITRIDE ALL tonyplot quit 第 3 页 共 3 页