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1、2002-09-03Ming-Ching WangBasic Oxide Etch IntroductionOxide Etch FilmPost Etch Clean Process FlowWet and Dry Oxide EtchOxide Etch ToolsOxide Etch Process GasOxide Etch Recipe Procedure Oxide Etch ProcessEtch Profile Naming2002-09-03Ming-Ching WangOxide Etch FilmqOxide Film : Th-SiO2, NSG, LP TEOS, P
2、E TEOS, AP TEOS, SRO, HDP, BPSG, BSG, SOG, HTOqNitride Film : LP SIN, PE SIN, PE SION2002-09-03Ming-Ching WangPost Etch Clean Process FlowNon-Metal Layer Etch Ash SPM (HSO4 + H2O2) + HF or APM (Polymer remove)Metal Layer Etch (in-situ ash) Ash Solvent (EKC, ACT)2002-09-03Ming-Ching WangWet Etch and
3、Dry Etch (1)qWet Etch ( 濕式蝕刻濕式蝕刻 ) Oxide : HF, BHF (NH4F/HF), Vapor HF , HF/EG (SiO2 + 6HF H2 + SiF6 + H2O) Nitride : 磷酸槽磷酸槽(不不適適宜宜PR mask) 優點優點 : 製程單純製程單純, 設備簡單設備簡單, 成本低成本低, 產能高產能高, 對底層高選擇比對底層高選擇比 缺點缺點 : 體積大體積大, 等向性蝕刻等向性蝕刻 (isotropic etch) 影響濕式蝕刻參數影響濕式蝕刻參數 :化學溶液濃度化學溶液濃度, 溫度溫度, Reaction Time , 2nd D
4、IW流量流量, Filter, S/D or IPA Dryer, Circulation pump 流量流量, Chemical exchange frequency2002-09-03Ming-Ching Wang以氫氟酸以氫氟酸(HF)而言，一般用以清除氧化層而言，一般用以清除氧化層(oxide)，但對矽晶材質亦有但對矽晶材質亦有侵蝕作用，故在蝕刻完氧化層後繼續損傷矽晶基板；但若換成緩衝過侵蝕作用，故在蝕刻完氧化層後繼續損傷矽晶基板；但若換成緩衝過的的Buffered Oxide Etching(BOE)溶液，則幾乎不損及矽晶材質，故溶液，則幾乎不損及矽晶材質，故能達到所謂自動停止能達到
5、所謂自動停止(etch-stop)效果效果2002-09-03Ming-Ching WangWet Etch and Dry Etch (2)qDry Etch ( 乾式蝕刻乾式蝕刻 ) 1. 物理性蝕刻物理性蝕刻解離成帶正電離子解離成帶正電離子,利用偏壓將離子加速利用偏壓將離子加速,濺擊表面濺擊表面 2. 化學性蝕刻化學性蝕刻 (電漿蝕刻電漿蝕刻)利用電漿將蝕刻氣體產生離子利用電漿將蝕刻氣體產生離子,分子分子,原子團產生化學反應原子團產生化學反應 3. 化學化學 + 物理性蝕刻物理性蝕刻電漿必須在真空度約電漿必須在真空度約10至至0.001 Torr 的環境下，才有可能被激發出來。的環境下，
6、才有可能被激發出來。 偏離子轟擊效應者使用氬氣偏離子轟擊效應者使用氬氣(argon)，加工出來之邊緣側向侵蝕現象極，加工出來之邊緣側向侵蝕現象極 微。而偏化學反應效應者則採氟系或氯系氣體微。而偏化學反應效應者則採氟系或氯系氣體(如四氟化碳如四氟化碳CF4)，經激，經激 發出來的電漿，即帶有氟或氯之離子團，可快速與晶片表面材質反應。發出來的電漿，即帶有氟或氯之離子團，可快速與晶片表面材質反應。 2002-09-03Ming-Ching WangDry etch考量事項考量事項 :蝕刻率蝕刻率, 均勻度均勻度, 選擇比選擇比, Profile, Reliability影響影響Dry etch參數參
7、數 :Pressure, RF power, Temperature, Reaction Gas, Flow rate, Gap position, Back side He pressure, Parts life time2002-09-03Ming-Ching Wang2002-09-03Ming-Ching WangOxide Etch ToolsqWet Etch ToolsDNS, SUGAI, Mattson, Magnum, TEL, SEZ, Fusion,SCPqDry Etch ToolsLAM Rambo, 9100, EXELAN, HP, HPTTEL DP, IE
8、M, DRM, SCCMAMAT MxP, MxP+, eMxP+, super e, eMAX, DPSAnelva, Hitachi 2002-09-03Ming-Ching WangOxide Etch Process GasProcess Gas Chemical reaction gas : SF6, CF4, CHF3, C4F8, NF3, C2F6, C2HF5, C5F8, C4F6, CH2F2, CH3F, C3F8 Addition gas : Ar, CO, O2, N2, H2 2002-09-03Ming-Ching WangOxide Etch Recipe P
9、rocedureRecipe Procedure ARC Open or De-scum ME (Main Etch, Just etch) OE (Over Etch, Selectivity etch) Dry Clean (Chamber clean, WAC) 2002-09-03Ming-Ching WangPRPRStop LayerARC OPEN or De-scumMEOEDry Clean per wafer or lots2002-09-03Ming-Ching WangOxide Etch ProcessAAEtch Back Hard Mask ViaContactP
10、ad & Fuse2002-09-03Ming-Ching WangAA Etchq Active Area (AA) LOCOS AA SiN etch stop on pad oxide or Si loss 6N-WellP-WellP+P+N+N+2 k SABPSG5.5k PETEOS400 SINON-WellP-WellP+P+N+N+Board less contact2002-09-03Ming-Ching WangSACBPSGBARCPoly1TEOS or SINSiNTEOSor SINSiNStop SIN etchSAC etch2002-09-03Ming-C
11、hing WangSelf Aligned Dual Damascene (SADD)Etch contacts and lines at same timeFill with Al, W, Cu, Then CMPBuried, patterned nitride layer2002-09-03Ming-Ching WangTrench - Via sequence Dual DamasceneBuried SiN, not patternedEtch to SiNPhoto for contactsEtch contacts and strip PR2002-09-03Ming-Ching
12、 WangCounter bore or Reverse Dual DamascenePhoto for contactEtch contact, through SiNPhoto for linesEtch lines2002-09-03Ming-Ching WangNo buried SiN layer Dual DamascenePhoto for contactsEtch contacts, photo for linesEtch lines2002-09-03Ming-Ching WangPad & Fuse Etchq Pad & Fuse : Define : Pad etch
13、for bounding pad Fuse etch for repair function Note : All product Pad etch are necessary Fuse etch depend on product device2002-09-03Ming-Ching WangPad & Fuse50 Ti / 300TiN200 Ti / 250TiNMet 1P+P+N+N+4kAlCuMet 21.5kSION+6kA SINMet 3Oxide remaining 4000 +/- 2000A200 Ti / 250TiN8kAlCu50 Ti / 375TiN10k HDPPADFuse2002-09-03Ming-Ching WangEtch Profile Namingq Profile Naming : Taper Under Cut Bowing Footing Under Etch (Etch Stop)HoldLineLineHoleHoldLineHoleHole2002-09-03Ming-Ching WangThank you