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1、DRT-210RealTemp 200 ManualVersion 1.1April 2008About VeecoVeeco Instruments provides specialized technical products and services (demonstrated on http:www.V). Veecos TurboDisc MOCVD Systems, located in Somerset, NJ, develops and manufactures MOCVD devices for clients throughout the world.Copyright N
2、oticeTurboDisc, RealTemp 200, EpiViser and Carrier Designer are copyrighted trademark properties of Veeco Compound Semiconductor Inc.Copyright 2008, Veeco Compound Semiconductor Inc. All rights reserved.TurboDisc MOCVD Systems 394 Elizabeth AvenueSomerset, NJ 08873Phone: (732) 560-5300VersionDoc. Ve
3、rsion NumberRevision DatePages AffectedChangeVersion 1.0n/aInitial ReleaseVersion 1.14-14-082-17File settings data addedDisclaimers and Legal NoticesThis document describes the proper, safe operation and maintenance practices of highly complex technical equipment. Every effort has been made to inclu
4、de compliant instructions, warnings and guidelines to ensure the safe and productive use of the systems described in this document.Veeco Technical Publications has carefully reviewed this document to ensure its reliability and completeness. If you discover any errors or omissions, please contact:Vee
5、co Technical Publications mailto:techpubsRealTemp 200 ManualContentsPage vCopyright 2008 Veeco Compound Semiconductor Inc.All Rights ReservedCHAPTER 1.GENERAL INFORMATION1-1Section 1.1Device Description and Basic Parameters1-1Section 1.1.Overview: The Basics of Emissivity Compensated Pyrometry1-4Opa
6、que Substrates1-6Transparent Substrates1-6Wafer carrier and Diffuse Reflectance1-6CHAPTER 2.OPERATING PROCEDURES2-1Section 2.1.General Operating Information2-1Login Levels2-1Operating Screen and Control Layout2-1Section 2.2.Quick start in Production mode (Operator level)2-4Automatic START/STOP2-5Man
7、ual START2-6Section 2.3.Events at Start of Run2-7Section 2.4.Measuring Wafer Carrier Temperature2-8Section 2.5.Adjustable Parameters During Run2-10Wafer Chart2-10Content2-10Scale Settings2-12Template Show /Hide2-13Data Analysis2-13Stopping the Run2-13Section 2.6.Advanced User Functions (Supervisor L
8、evel)2-14Login Menu Items and Dialogs2-14Supervisor Login2-14Changing the Password2-15Section 2.7.Software settings2-16File Settings2-17System2-19Wafer Carrier Selection Dialogs2-19Creating New Carrier/Editing Carrier Data2-22Carrier Emissivity2-23Location of the Optical Head on the Tool2-23Watch Di
9、ameter2-24Viewport (Head) Alias2-26Start Options2-26Editing Good Wafers2-28Tossed Wafers2-29Time Constant2-29Measurement Settings2-30Minimum Temperature2-31Gain Switch Temperature and Hysteresis2-31Minimum Speed2-32Maximum speed2-32Wafer Area for T and R Measurement2-32Use EpiViser Online2-33Bake Au
10、todetection2-34Ignore Wafer Tossing2-34Wafer Recognition2-34Using Wafer Pattern2-35Using Asymmetrical Carrier and Asymmetrical Carrier Mode2-37Substrate Transparency Selection2-38Chart Lines Properties2-40Snapshot2-40CHAPTER 3.CALIBRATION3-1Section 3.1.Reflectivity Calibration3-1Section 3.2.Backgrou
11、nd Reflectivity Calibration3-3Section 3.3.Pyrometer Offset Calibration3-4Section 3.4.Restoring Calibrations from the Manufacturer3-5Section 3.5.Alignment Mode3-6Section 3.6.View Port Status3-7CHAPTER 4.MULTIPLE INSTANCES OF REALTEMP 2004-1Section 4.1.Launching the RealTemp 200 Application4-1Section
12、4.2.Directories in Use4-1Section 4.3.Datalog Files Names4-3Section 4.4.Running Multiple Instances4-3CHAPTER 5.EQUIPMENT AND INSTALLATION5-1Section 5.1.Installing RealTemp 200 on the machine5-1Section 5.2.Installation of Two Optical Heads on the E300 Reactor5-3Section 5.3.Optical Head Alignment5-3CHA
13、PTER 6.APPENDIX A: REALTEMP200 FILES6-1Section 6.1.Output Files and Output File Data format6-1Users Parameters6-1Calibration Parameters6-1Layers Info6-2Section 6.2.Datalog Files Management6-5CHAPTER 7.APPENDIX B: COMMUNICATION WITH OTHER DEVICES 7-2Section 7.1.Analog Ouput tab7-2SECTION 7.2.TCP-IP T
14、AB7-3Section 7.3.TCP-In tab7-4SECTION 7.4.AXIOM TAB7-4FiguresFigure 1-1. Sequence of Operations to Provide Reflectivity/Temperature Readings1-1Figure 1-2. RealTemp 200 System1-2Figure 2-1. RealTemp 200 Operating Screen2-2Figure 2-2. Flow Diagram: Automatic Start/Stop of the Device2-5Figure 2-3. Real
15、Temp 200 Save As Dialog Box2-6Figure 2-4. Flow Diagram: Events at Start of Run2-7Figure 2-5. RealTemp 200 Operating Screen During a Run2-8Figure 2-6. Example: The Two Carrier/Watch Circle Configurations2-9Figure 2-7. RealTemp 200 Toolbar with Wafer Carrier Temperature (Tc) Displayed2-10Figure 2-8. S
16、how On Wafer Chart Dialog Box2-10Figure 2-9. Wafer Chart with Show Temperature, Reflectivity vs Wafer Number Mode Selected2-11Figure 2-10. Wafer Chart with Show Temperature, Reflectivity Bars vs WaferNumber Mode Selected2-11Figure 2-11. Hint Displaying Wafer #6 Temperature and Reflectivity2-12Figure
17、 2-12. Wafer Chart, Show Reflectivity, Emission DataBuffer Mode Selected2-12Figure 2-13. Wafer and Time Charts Scale Settings Dialog Boxes2-13Figure 2-14. Password Dialog Box2-14Figure 2-15. Title Bar and Main Menu Items (Operator/Supervisor Levels)2-15Figure 2-16. Change Password Dialog Box2-15Figu
18、re 2-17. Settings Menu (Supervisor Level)2-16Figure 2-18. File Settings Dialog Box2-17Figure 2-19. System Selection Dialog Box2-19Figure 2-20. Wafer Carrier Dialog Box2-20Figure 2-21. List of Carriers Available for GaNzilla E/D 3002-21Figure 2-22. Carrier Emissivity Dialog Box2-23Figure 2-23. Optica
19、l Head Position Dialog Box (E300 GaN)2-24Figure 2-24. Watch Circle Diagram2-24Figure 2-25. Watch circle Slightly Inaccurate/Requires Tuning2-25Figure 2-26. Watch circle Accurate2-26Figure 2-27. Start Options Dialog Box2-27Figure 2-28. Confirmation Dialog Box2-28Figure 2-29. Wafer #2 Turned Off Manua
20、lly or By Software2-29Figure 2-30. Time Constant Dialog Box2-30Figure 2-31. Measurement Settings Dialog Box2-31Figure 2-32. Reflectivity and Temperature Measurement Areas2-33Figure 2-33. Wafer Pattern Dialog Box (Pattern in Use)2-36Figure 2-34. Wafer Pattern Mode On (see Figure 2-30 for Pattern in U
21、se)2-37Figure 2-35. Asymmetrical Carrier Loaded2-37Figure 2-36. Substrate Transparency Dialog Box2-39Figure 2-37. Line Properties Dialog Boxes for Wafer and Time Charts2-40Figure 2-38. Data file with Snapshots (red circles) Loaded in Offline EpiViser2-41Figure 2-39. Snapshot Taken at 3060s/Opened in
22、 EpiViser2-42Figure 3-1. Reflectometer Calibration Dialog Box3-2Figure 3-2. Confirmation Dialog Box3-3Figure 3-3. Background Reflectivity Calibration Dialog Box3-4Figure 3-4. Pyrometer Offset Calibration Dialog Box3-5Figure 3-5. Confirmation Dialog Box (All Calibrations)3-6Figure 3-6. Alignment Mode
23、 Menu Items3-6Figure 3-7. Main Application Screen with Alignment Mode Enabled3-7Figure 3-8. Create Maintenance Record Dialog Box3-8Figure 3-9. Viewport Transparency Dialog Box3-9Figure 4-1. Datalog Files Default Directories (E300, two head configuration)4-2Figure 4-2. Two RealTemp 200 Application In
24、stances Running on the E300 Machine4-4Figure 5-1. E300 (GaNzilla) Reactor with Two Optical Head Assemblies Installed5-3Figure 5-2. Optical Head Alignment Components5-5Figure 5-3. Alignment Aperture Location5-6Figure 6-1. File Overwrite Confirmation Dialog Box6-5Figure 7-1. Analog Tab7-3Figure 7-2. T
25、CP-IP Tab7-4Figure 7-3. AxIOM Tab7-5About This DocumentThis documentation set includes the RealTemp 200 Emissivity Compensated Pyrometer Manual.Navigating within this DocumentAll procedures in this document begin with a light blue highlighted area and bordered with ruled horizontal lines, as in this
26、 sample:Procedure x-x Viewing a Drawing1. Sample text.2. Sample text.Navigating within RealTemp 200 User HelpRealTemp 200 software includes an integrated help facility, accessible by clicking the F1 key while in a RealTemp 200 session.RealTemp 200 ManualGeneral InformationCHAPTER 1.GENERAL INFORMATI
27、ONThis document describes the RealTemp 200 (REALTEMP 200) system, as used in conjunction with MOVCD devices manufactured by Veeco Instruments.Section 1.1DEVICE DESCRIPTION AND BASIC PARAMETERSVeecos RealTemp 200 (REALTEMP 200) is an Emissivity Compensated Pyrometer that functions in multi-wafer Rota
28、ting Disk Reactors. It is a device that combines a reflectometer (for real time emissivity calculations) and a pyrometer (utilizing obtained emissivity and measured radiance to calculate the temperature). The sequence of measurements and calculations that RealTemp200 performs to obtain reflectivity
29、and temperature is presented in Figure 1-1.Figure 1-1. Sequence of Operations to Provide Reflectivity/Temperature ReadingsPage 1-6Copyright 2008 Veeco Compound Semiconductor Inc.All Rights ReservedThe general system configuration of the device is depicted in Figure 1-2.Figure 1-2. RealTemp 200 Syste
30、mThe RealTemp 200 hardware consists of an Optical Head with electronics, a Sidecar box with the power supply and interface electronics, and a dedicated computer with data acquisition board(s). One computer with a Sidecar box can support up to three optical heads, installed on the reactor. These opti
31、cal heads can be RealTemp 200 heads, Deflectometer heads or combined DRT210 heads. Deflectometer and combined DRT210 devices are not discussed in this manual.The Optical Head contains an LED as well as the main and monitor photodetectors. The LED is thermostabilized and emits light at 930nm that is
32、modulated at 5.2 kHz. The monitor photodetector, together with power control circuitry maintain LED power stability. The main photodetector measures the intensity of the thermal emission from the wafers and the intensity of the LED light reflected by wafers. A digital data processing algorithm extra
33、cts reflectivity and emission data from the raw signal with low noise and high time resolution. High time resolution results in high spatial resolution of reflectivity / temperature profiles when the wafer carrier is spinning.RealTemp 200 software has two operating modes: SingleWafer and MultiWafer.
34、 The operating mode in use depends on the geometry of the carrier and the location of the optical head (the view port in use for this particular head).SingleWafer mode is active when the optical head detects only one wafer and thereby receives data from that particular wafer 100% of the time. In Sin
35、gleWafer mode, reflectivity and temperature data streams are averaged by a specified averaging time. SingleWafer mode is also forced during some calibration routines.MultiWafer mode is allowed when the optical head can see multiple wafers passing one by one under the head. When at least one reflecte
36、d wafer is loaded and rotation rate of thecarrier exceeds 260 RPM, the synchronization between the incoming data stream and instantaneous carrier angular position is established. After synchronization is established, the incoming reflectivity / temperature data stream collects in two (R and T) singl
37、e- revolution arrays. These arrays maintain profiles of reflectivity and temperature data along the watch circle. At this point, reflectivity / temperature profiles across the wafer become available for each wafer loaded. These profiles are displayed in the Wafer Chart (see Figure 2-9 and Figure 2-1
38、0). Based upon these profiles across the wafer, mean reflectivity and temperature for each wafer are calculated. The software evaluates where good wafers are located on the carrier and which pockets harbor dummy wafers or are merely empty. Then, the mean value for reflectivity and temperature is cal
39、culated and displayed. This mean value is based on the data not from all wafers, but only from good wafers. Wafer carrier temperature can also be measured in MultiWafer mode if the clearance between pockets on the watch circle is greater than the spot size from which the device is collecting data.Te
40、chnical specifications for the RealTemp 200 system are presented in Table 1-1.Table 1-1. RealTemp 200 Technical SpecificationsCHARACTERISTICPARAMETERSSpectral wavelength930 nm (10nm bandwidth)Data acquisition rate10.4 kHzOptical head focal distance12.0” (305mm), 14.0” (355mm) or 17.0” (430mm), or ca
41、n be customizedMeasurement spot size at focal distance0.2” (5mm) for 12” distance0.28” (7mm) for 17” distanceViewport typeTilted viewport, 1.33” conflat flange (provided with instrument)Reflectivity measurementNoise Temperature driftWafer tilt sensitivityLess than 0.02% on single wafer (|DR|/R) 0.5%
42、 in 18-40C range(|DR|/R) 5% for wafer tilt angle+/- 0.5o for 12” distance+/- 0.3o for 17” distanceTemperature measurementTemperature RangeNoise (black body) AccuracyRepeatability450 to 1200oC500oC,800oC 1.5oC (defined by black body calibration)500oCOperating ConditionsCarrier rotation rate at synchr
43、onized multiwafer modeWarm-up time260 RPM to 1800 RPM1 hourAmbient Temperature18 to 40CDimensions Optical head PCSidecar4” x 1.8” x 8”2U, 19” width, 27” depth3U, 9.5” width (half rack), 19” depthPower RequirementsPC and SidecarPCSidecar115 VAC or 220 VACIEC C14 plug on the back side of PC and Sideca
44、r boxautoswitchablepower switch on the rear side of the boxPower ConsumptionPCSidecar400W50WSection 1.1.OVERVIEW: THE BASICS OF EMISSIVITY COMPENSATED PYROMETRYEmissivity Compensated Pyrometry is an extremely effective method for non-contact temperature measurement of surfaces with time-varying emis
45、sivities. The complete absence of interference between instrument and measured process is the most valuable benefit of this technique.The goal of this overview is to explain the basics of Emissivity Compensated Pyrometry and the details of its application to MOCVD technology. Emissivity Compensated
46、Pyrometry is based on three fundamental laws: Planks radiation law for blackbody radiation Kirchhoffs radiation law Kirchhoffs energy conservation lawSpectral radiation Lb(,T) emitted from a square unit of a blackbody at an absolute temperature T in solid angle unit is given by the Plank formula:Lb(,T) d = c1/5 d / (exp(c2/T) -1)(1)Where c1=1.19*1016 Watts cm-2 sr -1 nm4, c2= 1.43888*107 nm oK (first and second radiation constants), and is the wavelength nm of light used in the measurement.Planks formula can be simplified for single-wavelength pyrometry